Interlayer coupling and superconducting properties of the triple-layer compoundB0.6C0.4(Sr0.25Ba0.75)2Ca2Cu3O9

It was investigated the influence of Ca substitution by Zn on the fluctuations of specific resistivity, thermal power and exsess conductivity of Bi2Sr2Ca0.6Zn0.4Cu2OX and Bi2Sr2Ca1Cu2OX in the 70-300К temperature interval. Experimental results explained taking into account strong anisotropy and multiband character of superconducting state in these compounds. The microscopic parameters such as dimensional crossover temperature (Tcr), interlayer coupling strength (J), and zero temperature coherence length along c axis (ξ0) are estimated.

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Enhanced Interlayer Coupling of CuO2 Planes Promote the Superconducting Properties of Cu0.5Tl0.5Ba2-YSrYCa2Cu3O10-δ (Y=0, 0.15, 0.25) Samples

Journal of Material Science & Engineering ◽

10.4172/2169-0022.1000298 ◽

2016 ◽

Vol 05 (06) ◽

Author(s):

Muzaffar MU ◽

Khan NA ◽

Rehman UU ◽

Ali SA

Keyword(s):

Interlayer Coupling ◽

Superconducting Properties

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Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100106399 ◽

1988 ◽

Vol 46 ◽

pp. 866-867

Author(s):

E. L. Hall ◽

A. Mogro-Campero ◽

L. G. Turner ◽

N. Lewis

Keyword(s):

Thin Film ◽

Thin Film Deposition ◽

Superconducting Films ◽

Electron Beam Evaporation ◽

Film Deposition ◽

Silicon Substrates ◽

Superconducting Properties ◽

Sequential Electron ◽

Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

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Processing and characterization of YBa2Cu3O7−x/Ag composites

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100173364 ◽

1990 ◽

Vol 48 (4) ◽

pp. 46-47

Author(s):

Jafar Javadpour ◽

Bradley L. Thiel ◽

Sarikaya Mehmet ◽

Ilhan A. Aksay

Keyword(s):

Composite System ◽

Precursor Solution ◽

Microstructural Development ◽

Superconducting Properties ◽

Practical Applications ◽

Nitrate Precursor ◽

Cold Pressed ◽

Tape Cast ◽

Composite Samples

Practical applications of bulk YBa2Cu3O7−x materials have been limited because of their inadequate critical current density (jc) and poor mechanical properties. Several recent reports have indicated that the addition of Ag to the YBa2Cu3O7−x system is beneficial in improving both mechanical and superconducting properties. However, detailed studies concerning the effect of Ag on the microstructural development of the cermet system have been lacking. Here, we present some observations on the microstructural evolution in the YBa2Cu3O7−x/Ag composite system.The composite samples were prepared by mixing various amounts (2.5 - 50 wt%) AgNO3 in the YBa2Cu3O7−x nitrate precursor solution. These solutions were then spray dried and the resulting powders were either cold pressed or tape cast. The microstructures of the sintered samples were analyzed using SEM (Philips 515) and an analytical TEM (Philips 430T).The SEM micrographs of the compacts with 2.5 and 50 wt% Ag addition sintered at 915°C (below the melting point of Ag) for 1 h in air are displayed in Figs. 1 and 2, respectively.

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