Parallel magnetic-field-induced conductance fluctuations in one- and two-subband ballistic quantum dots

2003 ◽  
Vol 68 (24) ◽  
Author(s):  
C. Gustin ◽  
S. Faniel ◽  
B. Hackens ◽  
S. Melinte ◽  
M. Shayegan ◽  
...  
1995 ◽  
Vol 34 (Part 1, No. 8B) ◽  
pp. 4342-4344
Author(s):  
Jonathan P. Bird ◽  
Koji Ishibashi ◽  
Yuichi Ochiai ◽  
Yoshinobu Aoyagi ◽  
Takuo Sugano

1995 ◽  
Vol 52 (11) ◽  
pp. 8295-8304 ◽  
Author(s):  
J. P. Bird ◽  
K. Ishibashi ◽  
D. K. Ferry ◽  
Y. Ochiai ◽  
Y. Aoyagi ◽  
...  

1997 ◽  
Vol 484 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
P. K. Bose ◽  
Gautam Majumder

AbstractIn this paper, we have investigated the Burstein-Moss shift(BMS) in QDs of III-V, II-VI and IV-VI semiconductors in the presence of a parallel magnetic field on the basis of newly formulated carrier disperson laws. It is found, taking QDs of InSb, Cds and CdTe as examples that the BMS increases with increasing doping and decreasing film thickness in ladder like manners. The numerical values of the BMS in QDs are much greater than that of their corresponding values for bulk specimens. The theoretical results as presented here are in agreement with the experimental observations as reported in literature.


1993 ◽  
Vol 71 (8) ◽  
pp. 1230-1233 ◽  
Author(s):  
V. N. Prigodin ◽  
K. B. Efetov ◽  
S. Iida

Sign in / Sign up

Export Citation Format

Share Document