scholarly journals Enhanced Rashba spin-orbit splitting inBi∕Ag(111)andPb∕Ag(111)surface alloys from first principles

2007 ◽  
Vol 75 (19) ◽  
Author(s):  
G. Bihlmayer ◽  
S. Blügel ◽  
E. V. Chulkov
2009 ◽  
Vol 79 (7) ◽  
Author(s):  
L. Moreschini ◽  
A. Bendounan ◽  
I. Gierz ◽  
C. R. Ast ◽  
H. Mirhosseini ◽  
...  

2019 ◽  
Vol 99 (19) ◽  
Author(s):  
Shifei Qi ◽  
Yulei Han ◽  
Fuming Xu ◽  
Xiaohong Xu ◽  
Zhenhua Qiao

2009 ◽  
Vol 80 (3) ◽  
Author(s):  
L. Moreschini ◽  
A. Bendounan ◽  
H. Bentmann ◽  
M. Assig ◽  
K. Kern ◽  
...  

2009 ◽  
Vol 7 ◽  
pp. 264-268
Author(s):  
E. Frantzeskakis ◽  
L. Moreschini ◽  
M. C. Falub ◽  
M. Grioni ◽  
S. Pons ◽  
...  

2007 ◽  
Vol 06 (03n04) ◽  
pp. 301-304
Author(s):  
V. F. RADANTSEV ◽  
V. V. KRUZHAEV

The Rashba effect peculiarities in gated accumulation layers on the zero-gap HgCdTe are studied theoretically and experimentally. It is shown that the kinetic binding is strongly affected by spin–orbit interaction. Although the spin–orbit splitting is smaller in accumulation layers as compared with inversion ones, the "Rashba polarization", Δn/n, can achieve 100% in the kinetic confinement regime.


RSC Advances ◽  
2017 ◽  
Vol 7 (19) ◽  
pp. 11761-11767 ◽  
Author(s):  
Tongwei Li ◽  
Xiangying Su ◽  
Haisheng Li ◽  
Weiwei Ju

Electronic properties and spin–orbit (SO) splitting of silicene adsorbed with Cu, Ag, Au and Pb atoms at different coverages are investigated by means of first-principles calculations.


1995 ◽  
Vol 395 ◽  
Author(s):  
T. Uenoyama ◽  
M. Suzuki

ABSTRACTOptical gain of wurtzite GaN/AlGaN quantum wells has been studied from a first-principles calculation using the k • p method. Most of the parameters in the k • p method were determined by fitting the band structures by the first-principles calculation. Owing to the small spin-orbit splitting energies of the wurtzite GaN and AIN, the optical gain has been calculated using the 6×6 Hamiltonian for the valence band. It is found that the large hole effective masses and the small spin-orbit splitting cause the higher threshold current density of wurtzite GaN/AlGaN quantum well lasers.


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