Band structure and associated electromagnetic fields in one-dimensional photonic crystals with left-handed materials

2008 ◽  
Vol 77 (12) ◽  
Author(s):  
M. de Dios-Leyva ◽  
O. E. González-Vasquez
Optik ◽  
2019 ◽  
Vol 180 ◽  
pp. 745-753 ◽  
Author(s):  
A.H. Gevorgyan ◽  
H. Gharagulyan ◽  
S.A. Mkhitaryan

2005 ◽  
Vol 244 (1-6) ◽  
pp. 259-267 ◽  
Author(s):  
F. Aguayo-Ríos ◽  
F. Villa-Villa ◽  
J.A. Gaspar-Armenta

2007 ◽  
Vol 21 (4) ◽  
pp. 485-499 ◽  
Author(s):  
F. Villa-Villa ◽  
J. A. Gaspar-Armenta ◽  
A. Mendoza-Suárez

2008 ◽  
Vol 10 (4) ◽  
pp. 043005 ◽  
Author(s):  
G A Luna-Acosta ◽  
H Schanze ◽  
U Kuhl ◽  
H-J Stöckmann

2008 ◽  
Vol 281 (14) ◽  
pp. 3681-3685 ◽  
Author(s):  
Liwei Zhang ◽  
Zhiguo Wang ◽  
Hong Chen ◽  
Hongqiang Li ◽  
Yewen Zhang

2008 ◽  
Vol 8 (12) ◽  
pp. 6584-6588 ◽  
Author(s):  
R. Márquez-Islas ◽  
B. Flores-Desirena ◽  
F. Pérez-Rodríguez

We investigate theoretically the coupling of exciton with light in a one-dimensional photonic crystal. The unit cell of the crystal consists of two alternating layers, namely a metallic layer and a semiconductor one. The frequency-dependent dielectric function of the metal is described by the Drude model, whereas for the semiconductor we use a nonlocal excitonic dielectric function. The polariton dispersion for s-polarized modes in the metal-semiconductor photonic crystal is compared with that for a dielectric-semiconductor photonic crystal. Because of the metal layers, a low-frequency gap appears in the photonic band structure. The presence of the semiconductor gives rise to photonic bands associated with the coupling of light with size-quantized excitón states. At frequencies above the longitudinal exciton frequency, the photonic band structure exhibits anticrossing phenomena produced by the upper exciton–polariton mode and size-quantized excitons. It is found that the anticrossing phenomena in the metal-semiconductor photonic crystal occur at higher frequencies in comparison with the dielectric-semiconductor case.


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