Uniaxial anisotropy and temperature driven magnetization reversal of Fe deposited on aMnAs∕GaAs(001)magnetic template

AbstractWe present a detailed study of the angular dependence of the magnetization reversal at room temperature of well characterized epitaxial La0.7Sr0.3MnO3 (001) thin films grown onto SrTiO3 (001) vicinal substrates. The step edges at the substrate surface promote a topological modulation of the films along the step direction, breaking the four-fold magneto crystalline symmetry and favoring a two-fold magnetic anisotropy term. The competition between the biaxial and uniaxial anisotropy is depicted within the framework of the current theory, resulting in a vanishing biaxial contribution. The films hence show the magnetization easy (hard) direction parallel (perpendicular) to the steps direction. The thickness-dependent of both anisotropy and magnetization reversal are discussed in terms of topographic changes.

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Spin Reorientation Transition and Magnetization Reversal Mechanism of Gd Doped FeCo High-Frequency Soft Magnetic Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.924.141 ◽

2014 ◽

Vol 924 ◽

pp. 141-151 ◽

Cited By ~ 1

Author(s):

Yu Rong An ◽

Yue Li ◽

Zhen Wang ◽

Ya Lu Zuo ◽

Li Xi

Keyword(s):

Thin Films ◽

Magnetic Anisotropy ◽

Magnetization Reversal ◽

High Frequency ◽

Uniaxial Anisotropy ◽

Spin Reorientation ◽

Spin Reorientation Transition ◽

Sputtering Power ◽

Deposition Power ◽

Reversal Mechanism

The magnetic FeCoGd thin films with various sputtering power from 10 to 30 W were fabricated on glass substrates by magnetron co-sputtering. The crystal structure of as-deposited FeCoGd thin films was investigated by X-ray diffraction. And an increasing trend of grain size with the increasing sputtering power was shown. When sputtering power is below 30 W, the films exhibited obviously in-plane uniaxial magnetic anisotropy, and the in-plane magnetic anisotropy field Hkdecreased with increasing deposition power. Moreover, good high frequency characteristics were obtained. The magnetization reversal mechanism has been investigated via the in-plane angular dependences of the magnetization and the coercivity. The experimental data points indicated that the magnetization reversal mechanism of FeCoGd film with in-plane uniaxial anisotropy is domain-wall depinning and coherent rotation when the applied field is close to the easy axis and hard axis, respectively. A spin reorientation transition phenomenon was observed when deposition power is larger than 30 W. A stripe domain structure for the sample with 30 W deposition power was developed due to a dominated perpendicular magnetic anisotropy.

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Control of Magnetization-Reversal Mechanism via Uniaxial Anisotropy Strength inLa0.67Sr0.33MnO3Electrodes for Spintronic Devices

Physical Review Applied ◽

10.1103/physrevapplied.4.064004 ◽

2015 ◽

Vol 4 (6) ◽

Cited By ~ 3

Author(s):

L. C. Phillips ◽

W. Yan ◽

X. Moya ◽

M. Ghidini ◽

F. Maccherozzi ◽

...

Keyword(s):

Magnetization Reversal ◽

Uniaxial Anisotropy ◽

Spintronic Devices ◽

Reversal Mechanism ◽

Anisotropy Strength

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Current induced effective magnetic field and magnetization reversal in uniaxial anisotropy (Ga,Mn)As

Applied Physics Letters ◽

10.1063/1.3520514 ◽

2010 ◽

Vol 97 (22) ◽

pp. 222501 ◽

Cited By ~ 48

Author(s):

M. Endo ◽

F. Matsukura ◽

H. Ohno

Keyword(s):

Magnetic Field ◽

Magnetization Reversal ◽

Uniaxial Anisotropy ◽

Effective Magnetic Field

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Magnetization Reversal by Rotation in Magnetic Thin Films Deposited on Step Bunched Si(111) Substrates

MRS Proceedings ◽

10.1557/proc-475-195 ◽

1997 ◽

Vol 475 ◽

Cited By ~ 6

Author(s):

M. Sussiau ◽

A. Encinas ◽

F. Nguyen Van Dau ◽

A. Vaurès ◽

A. Schuhl ◽

...

Keyword(s):

Thin Films ◽

Heat Treatment ◽

Magnetization Reversal ◽

Molecular Beam ◽

Uniaxial Anisotropy ◽

Magnetic Thin Films ◽

Induced Anisotropy ◽

Reversal Process ◽

Magnetic Metal ◽

Magnetization Reversal Process

ABSTRACTMagnetic and magnetoresistive properties of magnetic thin films deposited on periodically structured substrates have been studied. By using a thermodynamical heat treatment, we activate the step bunching phenomenon on vicinal Si(111) substrates misoriented towards [112] which results in a laterally modulated surface with a period around 0.1 μm. Epitaxial magnetic thin films deposited on these substrates exhibit an in-plane uniaxial anisotropy and a specific magnetoresistive behavior which characterizes the magnetization reversal process. In this contribution, we demonstrate that these properties can also be observed in non-epitaxial structures grown either by molecular beam epitaxy or by sputtering. In particular, magnetotransport measurements show that by varying parameters such as the nature of the magnetic metal, the layer thickness or the strength of the induced anisotropy, we can modulate the interplay between the anisotropy and the exchange stiffness, and, consequently, observe gradual magnetization reversal behaviors between a Stoner-Wohlfarth uniform mode and a non-uniform mode.

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Features of the 180º pulsed magnetization reversal of ferrite-garnet films with biaxial anisotropy in their plane

Electromagnetic field and materials (fundamental physical research) »with international participation ◽

10.12737/23119 ◽

2016 ◽

Author(s):

Матюнин ◽

Andrey Matyunin ◽

Николадзе ◽

Georgiy Nikoladze ◽

Поляков ◽

...

Keyword(s):

Magnetic Materials ◽

Magnetization Reversal ◽

Visual Representation ◽

Experimental Studies ◽

Uniaxial Anisotropy ◽

Ferrite Garnet ◽

Garnet Films ◽

First Time ◽

Nonlinear Magnetization

The calculations and experimental studies have shown that the intensity of nonlinear magnetization oscillations arising during the process of 180 pulsed magnetization reversal of real ferrite-garnet films with biaxial anisotropy weakly depends on the magnetization reversal pulse Hp frontf duration (in contrast to magnetic materials with uniaxial anisotropy). The pulsed magnetization reversalcurve, which provides a visual representation of the magnetization reversal speed saturation caused by the influence of nonlinear magnetization oscillations, analyzed for the first time.

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The Study of Magnetic Properties of Fe/Ag/Cr Thin Films

Diffusion Foundations ◽

10.4028/www.scientific.net/df.18.1 ◽

2018 ◽

Vol 18 ◽

pp. 1-6

Author(s):

Radhia Boukhalfa

Keyword(s):

Surface Roughness ◽

Magnetic Properties ◽

Buffer Layer ◽

Layer Thickness ◽

Magnetization Reversal ◽

Kerr Effect ◽

Uniaxial Anisotropy ◽

Hysteresis Loops ◽

Crystalline Substrate ◽

Buffer Layer Thickness

(300Å)Fe films were deposited, on MgO (001) single crystalline substrate with various buffer layer thickness tAg (Å) / (75Å) Cr. The magnetic properties of the Fe films were measured by magneto-optic Kerr effect (MOKE) technique. The MOKE measurements provided the tAg buffer layer thickness dependence of the hysteresis loops and the change of loop shapes with the surface roughness. It was found that the magnetization reversal process changed with the surface roughness. Magnetization rotation dominated the magnetization reversal for the smoothest films. As the films roughened, the domain-wall pinning set in, eventually dominating the magnetization reversal for the roughest films. Additionally, the magnetic uniaxial anisotropy in the Fe films disappeared as the roughness parameters increased. It was also found from MOKE that the surface roughness strongly affected the coercivity.

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