scholarly journals Nonmagnetic impurity effects in a three-dimensional topological superconductor: Fromp- tos-wave behaviors

2014 ◽  
Vol 89 (21) ◽  
Author(s):  
Yuki Nagai ◽  
Yukihiro Ota ◽  
Masahiko Machida
VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 75-78 ◽  
Author(s):  
W. J. Gross ◽  
D. Vasileska ◽  
D. K. Ferry

We discuss a full three-dimensional model of an ultra-small MOSFET, in which the transport is treated by a coupled EMC and molecular dynamics (MD) procedure to treat the Coulomb interaction in real space. The inclusion of the proper Coulomb interaction affects both the energy and momentum relaxation processes, but also has a dramatic effect on the characteristic curves of the device. We find that the short-range e–e and e–i terms, combined with discrete impurity effects, is also needed for accurate measurement of the device threshold voltage.


2007 ◽  
Vol 310 (2) ◽  
pp. 1316-1318 ◽  
Author(s):  
Yusuke Nambu ◽  
Satoru Nakatsuji ◽  
Yoshiteru Maeno

2013 ◽  
Vol 63 (5) ◽  
pp. 1028-1033 ◽  
Author(s):  
S. H. Do ◽  
J. W. Hwang ◽  
K. -Y. Choi ◽  
H. Zhou ◽  
H. Nojiri

2000 ◽  
Vol 61 (8) ◽  
pp. 5403-5407
Author(s):  
Myung-Hoon Chung ◽  
Sang Koo You ◽  
Dae-Young Yong ◽  
Chul Koo Kim ◽  
Kyun Nahm ◽  
...  

1975 ◽  
Vol 12 (1) ◽  
pp. 253-255 ◽  
Author(s):  
Y. Imry ◽  
P. A. Montano ◽  
D. Hone

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