Because of the capability to switch the magnetization of a nanoscale magnet, the spin transfer effect is critical for the application of magnetic random access memory. For this purpose, it is important to enhance the spin current carried by the charge current. Calculations based on
the diffusive spin-dependent transport equations reveal that the magnitude of spin current can be tuned by modifying the ferromagnetic layer and the spin relaxation process in the device. Increasing the ferromagnetic layer thickness is found to enhance both the spin current and the spin accumulation.
On the other hand, a strong spin relaxation in the capping layer also increases the spin current but suppresses the spin accumulation. To demonstrate the theoretical results, nanopillar structures with the size of ∼100 nm are fabricated and the current-induced magnetization switching behaviors
are experimentally studied. When the ferromagnetic layer thickness is increased from 3 nm to 20 nm, the critical switching current for the current-induced magnetization switching is significantly reduced, indicating the enhancement of the spin current. When the Au capping layer with a short
spin-diffusion length replaces the Cu capping layer with a long spin-diffusion length, the reduction of the critical switching current is also observed.
Weak localization, spin relaxation, and spin diffusion: Crossover between weak and strong Rashba coupling limits
