scholarly journals Spin Relaxation in Weak Localization Regime in Multilayer Graphene Spin Valves

2013 ◽  
Vol 52 (4R) ◽  
pp. 040205 ◽  
Author(s):  
Takehiro Yamaguchi ◽  
Rai Moriya ◽  
Satoru Masubuchi ◽  
Kazuyuki Iguchi ◽  
Tomoki Machida
Keyword(s):  
Spin Relaxation ◽  
Weak Localization ◽  
Spin Valves ◽  
Multilayer Graphene

scholarly journals Charge and spin transport in spin valves with anisotropic spin relaxation

2007 ◽  
Vol 75 (7) ◽  
Author(s):  
H. Saarikoski ◽  
W. Wetzels ◽  
G. E. W. Bauer
Keyword(s):  
Spin Relaxation ◽  
Spin Transport ◽  
Spin Valves

scholarly journals Contact-Induced Spin Relaxation in Graphene Nonlocal Spin Valves

2016 ◽  
Vol 6 (5) ◽  
Author(s):  
Gordon Stecklein ◽  
Paul A. Crowell ◽  
Jing Li ◽  
Yoska Anugrah ◽  
Qun Su ◽  
...  
Keyword(s):  
Spin Relaxation ◽  
Spin Valves

Spin relaxation and weak localization of two-dimensional electrons in asymmetric quantum Wells

1997 ◽  
Vol 31 (4) ◽  
pp. 391-398 ◽  
Author(s):  
A. M. Kreshchuk ◽  
S. V. Novikov ◽  
T. A. Polyanskaya ◽  
I. G. Savel’ev
Keyword(s):  
Quantum Wells ◽  
Spin Relaxation ◽  
Weak Localization ◽  
Two Dimensional ◽  
Asymmetric Quantum

Suppression of spin relaxation in rubrene nanowire spin valves

2012 ◽  
Vol 101 (19) ◽  
pp. 192403 ◽  
Author(s):  
Kazi M. Alam ◽  
Srikrishna C. Bodepudi ◽  
Ryan Starko-Bowes ◽  
Sandipan Pramanik
Keyword(s):  
Spin Relaxation ◽  
Spin Valves

Quantifying spin relaxation in mesoscopic Cu channels via a multitude of nonlocal spin valves

2019 ◽  
Vol 100 (14) ◽  
Author(s):  
Yunjiao Cai ◽  
Chuan Qin ◽  
Fatih Kandaz ◽  
Xingyu Shen ◽  
Chao Zhou ◽  
...  
Keyword(s):  
Spin Relaxation ◽  
Spin Valves

scholarly journals Contact induced spin relaxation in graphene spin valves with Al2O3 and MgO tunnel barriers

APL Materials ◽  
2016 ◽  
Vol 4 (3) ◽  
pp. 032503 ◽  
Author(s):  
Walid Amamou ◽  
Zhisheng Lin ◽  
Jeremiah van Baren ◽  
Serol Turkyilmaz ◽  
Jing Shi ◽  
...  
Keyword(s):  
Spin Relaxation ◽  
Spin Valves ◽  
Tunnel Barriers

2D ANOMALOUS MAGNETORESISTANCE IN THE PRESENCE OF SPIN–ORBIT SCATTERING

2007 ◽  
Vol 06 (03n04) ◽  
pp. 187-189
Author(s):  
NIKITA S. AVERKIEV ◽  
KONSTANTIN S. ROMANOV
Keyword(s):  
Magnetic Fields ◽  
Spin Relaxation ◽  
Diffusion Approximation ◽  
Weak Localization ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Semiconductor Structures ◽  
Weak Magnetic Fields

The model of weak localization in 2D semiconductor structures in the whole range of classically weak magnetic fields in the presence of the Elliot–Yafet spin relaxation has been developed. It was shown that the spin–orbit interaction influences the value of magnetoresistance in small magnetic fields (within diffusion approximation) and when diffusion approximation is no longer valid.

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