scholarly journals πSpin Berry Phase in a Quantum-Spin-Hall-Insulator-Based Interferometer: Evidence for the Helical Spin Texture of the Edge States

2016 ◽  
Vol 117 (7) ◽  
Author(s):  
Wei Chen ◽  
Wei-Yin Deng ◽  
Jing-Min Hou ◽  
D. N. Shi ◽  
L. Sheng ◽  
...  
2021 ◽  
Vol 38 (11) ◽  
pp. 110302
Author(s):  
Kun Luo ◽  
Wei Chen ◽  
Li Sheng ◽  
D. Y. Xing

Helical edge states are the hallmark of the quantum spin Hall insulator. Recently, several experiments have observed transport signatures contributed by trivial edge states, making it difficult to distinguish between the topologically trivial and nontrivial phases. Here, we show that helical edge states can be identified by the random-gate-voltage induced Φ 0/2-period oscillation of the averaged electron return probability in the interferometer constructed by the edge states. The random gate voltage can highlight the Φ 0/2-period Al’tshuler–Aronov–Spivak oscillation proportional to sin2(2πΦ/Φ 0) by quenching theΦ 0-period Aharonov–Bohm oscillation. It is found that the helical spin texture induced π Berry phase is key to such weak antilocalization behavior with zero return probability at Φ = 0. In contrast, the oscillation for the trivial edge states may exhibit either weak localization or antilocalization depending on the strength of the spin-orbit coupling, which has finite return probability at Φ = 0. Our results provide an effective way for the identification of the helical edge states. The predicted signature is stabilized by the time-reversal symmetry so that it is robust against disorder and does not require any fine adjustment of system.


2018 ◽  
Vol 98 (16) ◽  
Author(s):  
Fernando Dominguez ◽  
Benedikt Scharf ◽  
Gang Li ◽  
Jörg Schäfer ◽  
Ralph Claessen ◽  
...  

2008 ◽  
Vol 101 (24) ◽  
Author(s):  
Bin Zhou ◽  
Hai-Zhou Lu ◽  
Rui-Lin Chu ◽  
Shun-Qing Shen ◽  
Qian Niu

2021 ◽  
Vol 127 (20) ◽  
Author(s):  
Pankaj Bhalla ◽  
Ming-Xun Deng ◽  
Rui-Qiang Wang ◽  
Lan Wang ◽  
Dimitrie Culcer

2019 ◽  
Vol 123 (18) ◽  
Author(s):  
Daniel Gresta ◽  
Mariano Real ◽  
Liliana Arrachea

Nanophotonics ◽  
2019 ◽  
Vol 8 (8) ◽  
pp. 1363-1369 ◽  
Author(s):  
Rasmus E. Christiansen ◽  
Fengwen Wang ◽  
Ole Sigmund ◽  
Søren Stobbe

AbstractDesigning photonic topological insulators (PTIs) is highly non-trivial because it requires inversion of band symmetries around the band gap, which was so far done using intuition combined with meticulous trial and error. Here we take a completely different approach: we consider the design of PTIs as an inverse design problem and use topology optimization to maximize the transmission through an edge mode past a sharp bend. Two design domains composed of two different but initially identical C6ν-symmetric unit cells define the geometrical design problem. Remarkably, the optimization results in a PTI reminiscent of the shrink-and-grow approach to quantum-spin-Hall PTIs but with notable differences in the crystal structure as well as qualitatively different band structures and with significantly improved performance as gauged by the band-gap sizes, which are at least 50% larger than in previous designs. Furthermore, we find a directional β-factor exceeding 99% and very low losses for sharp bends. Our approach allows the introduction of fabrication limitations by design and opens an avenue towards designing PTIs with hitherto-unexplored symmetry constraints.


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