Comment on “Fundamental Resolution of Difficulties in the Theory of Charged Point Defects in Semiconductors”

Physical Review Letters ◽

10.1103/physrevlett.120.039601 ◽

2018 ◽

Vol 120 (3) ◽

Author(s):

Hui-Xiong Deng ◽

Su-Huai Wei

Keyword(s):

Point Defects ◽

Defects In Semiconductors ◽

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Chemical Interpretation of Charged Point Defects in Semiconductors: A Case Study of Mg2Si

10.33774/chemrxiv-2021-729bm ◽

2021 ◽

Author(s):

Michael Toriyama ◽

Madison Brod ◽

G Jeffrey Snyder

Keyword(s):

Point Defects ◽

Defects In Semiconductors ◽

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Comment on “Fundamental Resolution of Difficulties in the Theory of Charged Point Defects in Semiconductors”

Physical Review Letters ◽

10.1103/physrevlett.120.039603 ◽

2018 ◽

Vol 120 (3) ◽

Author(s):

Wei Chen ◽

Alfredo Pasquarello

Keyword(s):

Point Defects ◽

Defects In Semiconductors ◽

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Fundamental Resolution of Difficulties in the Theory of Charged Point Defects in Semiconductors

Physical Review Letters ◽

10.1103/physrevlett.119.105501 ◽

2017 ◽

Vol 119 (10) ◽

Author(s):

Yu-Ning Wu ◽

X.-G. Zhang ◽

Sokrates T. Pantelides

Keyword(s):

Point Defects ◽

Defects In Semiconductors ◽

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Charged point defects in semiconductors

Materials Science and Engineering R Reports ◽

10.1016/j.mser.2006.01.002 ◽

2006 ◽

Vol 55 (3-6) ◽

pp. 57-149 ◽

Author(s):

Edmund G. Seebauer ◽

Meredith C. Kratzer

Keyword(s):

Point Defects ◽

Defects In Semiconductors ◽

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Point Defects in Semiconductors: Microscopic Identification, Metastable Properties, Defect Migration, and Diffusion

10.21236/ada206947 ◽

1989 ◽

Author(s):

James A. Van Vechten ◽

John F. Wager

Keyword(s):

Point Defects ◽

Defect Migration ◽

Microscopic Identification ◽

Defects In Semiconductors ◽

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Convergence of supercell calculations for point defects in semiconductors: Vacancy in silicon

Physical Review B ◽

10.1103/physrevb.58.1318 ◽

1998 ◽

Vol 58 (3) ◽

pp. 1318-1325 ◽

Author(s):

M. J. Puska ◽

S. Pöykkö ◽

M. Pesola ◽

R. M. Nieminen

Keyword(s):

Point Defects ◽

Defects In Semiconductors

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Structure and Properties of Point Defects in Semiconductors

Point and Extended Defects in Semiconductors - NATO ASI Series ◽

10.1007/978-1-4684-5709-4_1 ◽

1989 ◽

pp. 1-14 ◽

Author(s):

L. C. Kimerling

Keyword(s):

Point Defects ◽

Structure And Properties ◽

Defects In Semiconductors

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Simplified embedding schemes for the quantum-chemical description of neutral and charged point defects in SiO2 and related dielectrics

The Journal of Chemical Physics ◽

10.1063/1.1323957 ◽

2000 ◽

Vol 113 (23) ◽

pp. 10744-10752 ◽

Author(s):

Davide Erbetta ◽

Davide Ricci ◽

Gianfranco Pacchioni

Keyword(s):

Point Defects ◽

Quantum Chemical ◽

Charged Point ◽

Chemical Description

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Time-dependent density functional study on the excitation spectrum of point defects in semiconductors

physica status solidi (b) ◽

10.1002/pssb.201046254 ◽

2010 ◽

Vol 248 (6) ◽

pp. 1337-1346 ◽

Author(s):

Adam Gali

Keyword(s):

Excitation Spectrum ◽

Point Defects ◽

Density Functional ◽

Time Dependent ◽

Functional Study ◽

Density Functional Study ◽

Defects In Semiconductors ◽

Dependent Density

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Linear-scaling density-functional simulations of charged point defects in Al2O3 using hierarchical sparse matrix algebra

The Journal of Chemical Physics ◽

10.1063/1.3492379 ◽

2010 ◽

Vol 133 (11) ◽

pp. 114111 ◽

Author(s):

N. D. M. Hine ◽

P. D. Haynes ◽

A. A. Mostofi ◽

M. C. Payne

Keyword(s):

Point Defects ◽

Density Functional ◽

Matrix Algebra ◽

Sparse Matrix ◽

Linear Scaling ◽

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