scholarly journals Accurate band alignment at the amorphous Al2O3 /p-Ge(100) interface determined by hard x-ray photoelectron spectroscopy and density functional theory

2018 ◽  
Vol 2 (11) ◽  
Author(s):  
Nicholas F. Quackenbush ◽  
Eric Cockayne ◽  
James M. Ablett ◽  
D. Peter Siddons ◽  
Joseph C. Woicik ◽  
...  
Keyword(s):  
Density Functional Theory ◽  
Photoelectron Spectroscopy ◽  
Density Functional ◽  
Band Alignment ◽  
Functional Theory ◽  
X Ray ◽  
Amorphous Al2o3

Experimental and First-Principles Studies of the Band Alignment at the HfO2/4H-SiC (0001) Interface

2006 ◽  
Vol 527-529 ◽  
pp. 1071-1074 ◽  
Author(s):  
Carey M. Tanner ◽  
Jong Woo Choi ◽  
Jane P. Chang
Keyword(s):  
Conduction Band ◽  
Photoelectron Spectroscopy ◽  
Density Functional ◽  
Atomic Layer ◽  
Band Alignment ◽  
Functional Theory ◽  
X Ray ◽  
Conduction Band Offset ◽  
Mos Devices ◽  
Layer Deposition

The electronic properties of HfO2 films on 4H-SiC were investigated to determine their suitability as high-κ dielectrics in SiC power MOS devices. The band alignment at the HfO2/4HSiC interface was determined by X-ray photoelectron spectroscopy (XPS) and supported by density functional theory (DFT) calculations. For the experimental study, HfO2 films were deposited on ntype 4H-SiC by atomic layer deposition (ALD). XPS analysis yielded valence and conduction band offsets of 1.69 eV and 0.75 eV, respectively. DFT predictions based on two monoclinic HfO2/4HSiC (0001) structures agree well with this result. The small conduction band offset suggests the potential need for further interface engineering and/or a buffer layer to minimize electron injection into the gate oxide.

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