Quasihydrostatic versus nonhydrostatic pressure effects on the electrical properties of NiPS3

2021 ◽  
Vol 5 (12) ◽  
Author(s):  
Hengbo Cui ◽  
Seohee Yun ◽  
Kyeong Jun Lee ◽  
Chanhyeon Lee ◽  
Seo Hyoung Chang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Pressure Effects ◽  
Nonhydrostatic Pressure

Pressure effects on the joint elastic-electrical properties of reservoir sandstones

2011 ◽  
Vol 59 (3) ◽  
pp. 506-517 ◽  
Author(s):  
Tongcheng Han ◽  
Angus I. Best ◽  
Jeremy Sothcott ◽  
Lucy M. MacGregor
Keyword(s):  
Electrical Properties ◽  
Pressure Effects ◽  
Reservoir Sandstones

scholarly journals PrVO4 under High Pressure: Effects on Structural, Optical, and Electrical Properties

2020 ◽  
Vol 59 (24) ◽  
pp. 18325-18337
Author(s):  
Enrico Bandiello ◽  
Catalin Popescu ◽  
Estelina Lora da Silva ◽  
Juan Ángel Sans ◽  
Daniel Errandonea ◽  
...  
Keyword(s):  
High Pressure ◽  
Electrical Properties ◽  
Pressure Effects ◽  
Optical And Electrical Properties ◽  
High Pressure Effects

Phosphorus doping and deposition pressure effects on optical and electrical properties of polysilicon

2006 ◽  
Vol 26 (2-3) ◽  
pp. 177-180 ◽  
Author(s):  
M. Zaghdoudi ◽  
M.M. Abdelkrim ◽  
M. Fathallah ◽  
T. Mohammed-Brahim ◽  
R. Rogel
Keyword(s):  
Electrical Properties ◽  
Pressure Effects ◽  
Optical And Electrical Properties ◽  
Deposition Pressure ◽  
Phosphorus Doping

Pressure Effects on the Electrical Properties of Polycrystalline Boron

1967 ◽  
Vol 114 (8) ◽  
pp. 805 ◽  
Author(s):  
Terrell N. Andersen ◽  
Onnig H. Bezirjian ◽  
Henry Eyring
Keyword(s):  
Electrical Properties ◽  
Pressure Effects

scholarly journals Hydrostatic and Nonhydrostatic Pressure Effects on the Pressure-Induced Iron-Based Superconductor

2016 ◽  
Vol 26 (1) ◽  
pp. 27-34
Author(s):  
Nobuyuki KURITA ◽  
Motoi KIMATA ◽  
Hiroyuki SUZUKI ◽  
Takehiko MATSUMOTO ◽  
Keizo MURATA ◽  
...  
Keyword(s):  
Pressure Effects ◽  
Nonhydrostatic Pressure ◽  
Iron Based

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

The morphologies and electrical properties of indium contacts on (100) cadmium telluride surfaces

1992 ◽  
Vol 50 (2) ◽  
pp. 1422-1423
Author(s):  
A.M. Letsoalo ◽  
M.E. Lee ◽  
E.O. de Neijs
Keyword(s):  
Electrical Properties ◽  
Cadmium Telluride ◽  
Methanol Solution ◽  
Electrical Characteristics ◽  
Metal Contacts ◽  
Deposition Technique ◽  
Interfacial Layers ◽  
Semiconductor Contacts ◽  
Grown Single Crystal ◽  
Diamond Abrasive

Semiconductor devices require metal contacts for efficient collection of electrical charge. The physics of these metal/semiconductor contacts assumes perfect, abrupt and continuous interfaces between the layers. However, in practice these layers are neither continuous nor abrupt due to poor nucleation conditions and the formation of interfacial layers. The effects of layer thickness, deposition rate and substrate stoichiometry have been previously reported. In this work we will compare the effects of a single deposition technique and multiple depositions on the morphology of indium layers grown on (100) CdTe substrates. The electrical characteristics and specific resistivities of the indium contacts were measured, and their relationships with indium layer morphologies were established.Semi-insulating (100) CdTe samples were cut from Bridgman grown single crystal ingots. The surface of the as-cut slices were mechanically polished using 5μm, 3μm, 1μm and 0,25μm diamond abrasive respectively. This was followed by two minutes immersion in a 5% bromine-methanol solution.

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