Processing–Structure–Performance Relationship in Organic Transistors: Experiments and Model

In this paper, organic thin film transistors with different configurations are fabricated, and the effect on their performance when tailoring the semiconductor/insulator and semiconductor/contact interfaces through suitable treatments is analyzed. It is shown that the admittance spectroscopy used together with a properly developed electrical model turns out to be a particularly appropriate technique for correlating the performance of devices based on new materials in the manufacturing methods. The model proposed here to describe the equivalent metal–insulator–semiconductor (MIS) capacitor enables the extraction of a wide range of parameters and the study of the physical phenomena occurring in the transistors: diffusion of mobile ions through the insulator, charge trapping at the interfaces, dispersive transport in the semiconductor, and charge injection at the metal contacts. This is necessary to improve performance and stability in the case, like this one, of a novel organic semiconductor being employed. Atomic force microscopy images are also exploited to support the relationship between the semiconductor morphology and the electrical parameters.

Control and understanding of metal contacts to β-Ga2O3 single crystals: a review

Gallium oxide (Ga2O3) is a promising semiconductor for high power devices and solar blind ultraviolet photodetectors due to its large bandgap, a high breakdown field, and high thermal stability. Recently, a considerable achievement has been obtained for the growth of high-quality β-Ga2O3 and high performance β-Ga2O3 based devices. However, rapid advance in device performance can be limited by the critical issues of metal contacts to β-Ga2O3 such as barrier height, leakage current, ohmic contact, and surface, interfacial and deep states. This article aims to provide a review on the recent studies in the control and understanding of metal contacts to β-Ga2O3, particularly in terms of the barrier formation. This review suggests that understanding the current transport mechanisms of metal contacts to β-Ga2O3 more thoroughly is necessary to enhance the performance, stability and reliability of β-Ga2O3 based devices.

Barrier properties and current conduction mechanism for metal contacts to lightly and highly doped p-type 4H-SiC

The barrier properties of Ti, Ni and Pt contact to lightly (9×1016 cm-3) and highly (9×1018 cm-3) doped p-type 4H-SiC were investigated. It is found that the barrier heights and ideality factors estimated from thermionic emission model for the lightly doped samples are non-ideal and abnormally temperature dependent. The anomalies have been successfully explained in terms of both pinch-off model and Gaussian distribution of inhomogeneous barrier heights. In addition, the evaluated homogeneous barrier heights are reasonably close to the average barrier heights from capacitance-voltage measurements. For the highly doped samples, thermionic field emission (TFE) is found to be the dominant carrier transport mechanism. The barrier heights estimated from TFE model are temperature independent. If the barrier inhomogeneities and tunneling effects are considered, the experimental results of the samples are in well agreement with the theoretical calculations.

Electrical and thermal analysis of Symmetric and Asymmetric metal contacts in Resistive Switching Devices

The full text of this preprint has been withdrawn by the authors due to author disagreement with the posting of the preprint. Therefore, the authors do not wish this work to be cited as a reference. Questions should be directed to the corresponding author.

A comparison of pad metallization in miniaturized microfabricated silicon microcantilever-based wafer probes for low contact force low skate on-wafer measurements

Miniaturized, microfabricated microelectromechanical systems (MEMS)-based wafer probes are used here to evaluate different contact pad metallization at low tip forces (<mN) and low skate on the on-wafer pads. The target application is low force RF probes for on-wafer measurements which cause minimal damage to both probes and pads. Low force enables the use of softer, more conductive metallisation. We have studied four different thin film contact pad metals based on their thin film electrical resistivity and micro-hardness: gold, nickel, molybdenum, and chromium. The contact pads sizes were micrometre (1.9×1.9 µm2) and sub-micrometre (0.6×0.6 µm2). The contact resistance of Au-Au, Ni-Au, Mo-Au, and Cr-Au was measured as a function of tip deflection. The tip force (loading) of the contacts was evaluated from the deflection of the cantilever. It was observed that an overtravel of 300 nm resulting in a contact force of ~400 µN was sufficient to achieve a contact resistance <1 Ω for a sub-micrometre gold contact pad. Our results are compared with an analytical model of contact resistance in loaded metal-metal contacts—a reasonable fit was found. A larger contact resistance was observed for the other metals—but their hardness may be advantageous when probing other materials. Using a combination of a rigid silicon cantilever (>1000 Nm-1) and small contact pads enabled us to show that it is the length of the pad (in contact with the surface) which determines the contact resistivity rather than the total contact pad area.

Intact metal/metal halide van der Waals junction enables reliable memristive switching with high endurance

Organic-inorganic or inorganic metal halide materials have emerged as a promising candidate for a resistive switching material owing to its capability to achieve low operating voltage, high on/off ratio and multi-level switching. However, the high switching variation, limited endurance and poor reproducibility of the device hinder practical use of the memristors. Here, we report a universal approach to relieve the issues by using a van der Waals metal contacts (vdWC). By transferring the pre-deposited metal contact onto the active layers, an intact junction between the metal halide and contact layer is formed without unintended damage in the active layer that has been caused by a conventional physical deposition process of the metal contacts. Compared to the thermally evaporated metal contact (EVC), the vdWC did not degrade optoelectronic quality of the underlying layer to enable memristors with reduced switching variation, significantly enhanced endurance and reproducibility relative to those based on the EVC. By adopting various metal halide active layers, versatile utility of the vdWC is demonstrated. Thus, this vdWC approach can be a useful platform technology for development of high-performance and reliable memristors for future computing.