Fabrication and magnetic properties of electron beam lithography patterned arrays of single crystals

2000 ◽  
Vol 36 (5) ◽  
pp. 3002-3004 ◽  
Author(s):  
J.I. Martin ◽  
J.L. Vicent ◽  
J.L. Costa-Kramer ◽  
J.L. Menendez ◽  
A. Cebollada ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Electron Beam ◽  
Single Crystals ◽  
Electron Beam Lithography

Magnetic properties of magnetite arrays produced by the method of electron beam lithography

1996 ◽  
Vol 23 (20) ◽  
pp. 2847-2850 ◽  
Author(s):  
James G. King ◽  
Wyn Williams ◽  
C. D. W. Wilkinson ◽  
Stephen McVitie ◽  
John N. Chapman
Keyword(s):  
Magnetic Properties ◽  
Electron Beam ◽  
Electron Beam Lithography

Direct fabrication of diffraction grating onto organic single crystals by electron beam lithography

2018 ◽  
Vol 57 (3S2) ◽  
pp. 03EH11 ◽  
Author(s):  
Yoshihiro Kawata ◽  
Kazuki Aoki ◽  
Yuhi Inada ◽  
Takeshi Yamao ◽  
Shu Hotta
Keyword(s):  
Electron Beam ◽  
Single Crystals ◽  
Electron Beam Lithography ◽  
Diffraction Grating ◽  
Direct Fabrication

scholarly journals Morphology and magnetic properties of sputtered Co80Cr20thin film antidot patterns obtained by Electron Beam Lithography

2010 ◽  
Vol 200 (7) ◽  
pp. 072034
Author(s):  
S Giurdanella ◽  
E Celasco ◽  
A Chiolerio ◽  
P Martino ◽  
P Pandolfi ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Electron Beam ◽  
Electron Beam Lithography

Active stripe waveguides produced by electron beam lithography in LiF single crystals

1998 ◽  
Vol 153 (4-6) ◽  
pp. 223-225 ◽  
Author(s):  
Rosa Maria Montereali ◽  
Antonella Mancini ◽  
Giancarlo C Righini ◽  
Stefano Pelli
Keyword(s):  
Electron Beam ◽  
Single Crystals ◽  
Electron Beam Lithography ◽  
Active Stripe

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

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