Direct fabrication of diffraction grating onto organic single crystals by electron beam lithography

2018 ◽  
Vol 57 (3S2) ◽  
pp. 03EH11 ◽  
Author(s):  
Yoshihiro Kawata ◽  
Kazuki Aoki ◽  
Yuhi Inada ◽  
Takeshi Yamao ◽  
Shu Hotta
Keyword(s):  
Electron Beam ◽  
Single Crystals ◽  
Electron Beam Lithography ◽  
Diffraction Grating ◽  
Direct Fabrication

Angle sensitivity testing of equal-period plane diffraction grating fabricated through electron beam lithography line-by-line method

2020 ◽  
pp. 2150144
Author(s):  
Yunhui Dong ◽  
Wei He ◽  
Wen Zhang ◽  
Mingli Dong
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Diffraction Grating ◽  
Incident Light ◽  
Optical Spectrum Analyzer ◽  
Angular Sensitivity ◽  
Sensitivity Testing ◽  
Line Method ◽  
Grating Region ◽  
Plane Diffraction

An equal-period plane diffraction grating fabricated through electron beam lithography line-by-line method was designed and applied to the experiment of angle sensitivity testing. The size of the fabricated grating region was [Formula: see text] mm and the period was 1526 nm. The incident light was transmitted via the Y-type fiber to collimator lens fixed on the angle disc, which can be adjusted to change the incident light angle. The diffraction spectra generated by the incident light irradiating the grating surface were collected by the optical spectrum analyzer. In this experiment, the incident light angle was fixed at 25[Formula: see text]. When the spot moved horizontally by 50 mm, the diffraction wavelength was basically unchanged. When the incident light angle was adjusted from 15[Formula: see text] to 31[Formula: see text], the diffraction wavelength was changed from 834.03 nm to 1589.80 nm, the angular sensitivity was 47.508 nm/[Formula: see text], and the linearity was 0.9998.

Proximity Correction for Fabricating a Chirped Diffraction Grating by Direct-Writing Electron-Beam Lithography

2003 ◽  
Vol 42 (Part 1, No. 9A) ◽  
pp. 5602-5606 ◽  
Author(s):  
Masato Okano ◽  
Hisao Kikuta ◽  
Yoshihiko Hirai ◽  
Kazuya Yamamoto ◽  
Tsutom Yotsuya
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Diffraction Grating ◽  
Direct Writing

Direct fabrication of micro/nano fluidic channels by electron beam lithography

2009 ◽  
Vol 86 (4-6) ◽  
pp. 1314-1316 ◽  
Author(s):  
Daniel M. Koller ◽  
Nicole Galler ◽  
Harald Ditlbacher ◽  
Andreas Hohenau ◽  
Alfred Leitner ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Direct Fabrication

Optimization of Diffraction Grating Profiles in Fabrication by the Electron-beam Lithography

2002 ◽  
Author(s):  
Masato Okano ◽  
Tsutom Yotsuya ◽  
Hisao Kikuta ◽  
Yoshihiko Hirai ◽  
Kazuya Yamamoto
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Diffraction Grating

Active stripe waveguides produced by electron beam lithography in LiF single crystals

1998 ◽  
Vol 153 (4-6) ◽  
pp. 223-225 ◽  
Author(s):  
Rosa Maria Montereali ◽  
Antonella Mancini ◽  
Giancarlo C Righini ◽  
Stefano Pelli
Keyword(s):  
Electron Beam ◽  
Single Crystals ◽  
Electron Beam Lithography ◽  
Active Stripe

Fabrication and magnetic properties of electron beam lithography patterned arrays of single crystals

2000 ◽  
Vol 36 (5) ◽  
pp. 3002-3004 ◽  
Author(s):  
J.I. Martin ◽  
J.L. Vicent ◽  
J.L. Costa-Kramer ◽  
J.L. Menendez ◽  
A. Cebollada ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Electron Beam ◽  
Single Crystals ◽  
Electron Beam Lithography

Optimization of diffraction grating profiles in fabrication by electron-beam lithography

2004 ◽  
Vol 43 (27) ◽  
pp. 5137 ◽  
Author(s):  
Masato Okano ◽  
Hisao Kikuta ◽  
Yoshihiko Hirai ◽  
Kazuya Yamamoto ◽  
Tsutom Yotsuya
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Diffraction Grating

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

Sign in / Sign up

Export Citation Format

Share Document