Transverse scattering matrix formulation for a class of waveguide eigenvalue problems

1993 ◽  
Vol 41 (6) ◽  
pp. 1044-1051 ◽  
Author(s):  
Z. Ma ◽  
E. Yamashita ◽  
S. Xu

Author(s):  
Joseph D. C. Peng

The relative intensities of the ED spots in a cross-grating pattern can be calculated using N-beam electron diffraction theory. The scattering matrix formulation of N-beam ED theory has been previously applied to imperfect microcrystals of gold containing stacking disorder (coherent twinning) in the (111) crystal plane. In the present experiment an effort has been made to grow single-crystalline, defect-free (111) gold films of a uniform and accurately know thickness using vacuum evaporation techniques. These represent stringent conditions to be met experimentally; however, if a meaningful comparison is to be made between theory and experiment, these factors must be carefully controlled. It is well-known that crystal morphology, perfection, and orientation each have pronounced effects on relative intensities in single crystals.The double evaporation method first suggested by Pashley was employed with some modifications. Oriented silver films of a thickness of about 1500Å were first grown by vacuum evaporation on freshly cleaved mica, with the substrate temperature at 285° C during evaporation with the deposition rate at 500-800Å/sec.



2018 ◽  
Vol 23 (4) ◽  
pp. 71 ◽  
Author(s):  
C. Custers ◽  
J. Jansen ◽  
E. Lomonova

This paper describes the scattering matrix approach to obtain the solution to electromagnetic field quantities in harmonic multi-layer models. Using this approach, the boundary conditions are solved in such way that the maximum size of any matrix used during the computations is independent of the number of regions defined in the problem. As a result, the method is more memory efficient than classical methods used to solve the boundary conditions. Because electromagnetic sources can be located inside the regions of a configuration, the scattering matrix formulation is developed to incorporate these sources into the solving process. The method is applied to a 3D electromagnetic configuration for verification.



2010 ◽  
Vol 56 (6) ◽  
pp. 1799-1806 ◽  
Author(s):  
Nark Nyul Choi ◽  
Min-Ho Lee


1990 ◽  
Vol 77 (2-3) ◽  
pp. 144-146
Author(s):  
Taraprasad Chattopadhyay ◽  
Masamitsu Nakajima




1995 ◽  
Vol 5 (3) ◽  
pp. 79-80 ◽  
Author(s):  
V. Trenkic ◽  
T.M. Benson ◽  
C. Christopoulos


Author(s):  
C.D. Cann ◽  
C.T.B. Foxon ◽  
S.S. Sheinin

Calculations of the diffraction contrast of dislocations are of great importance in understanding the nature of dislocation images observed by the technique of thin film electron microscopy. The calculations which have been carried out up to the present time have been based on the two beam approximation of the dynamical theory and thus neglect the effects of systematic reflections. The results presented in this report take these reflections into account by using the scattering matrix formulation of the general dynamical theory taking effects of absorption into account. The variation of intensity across a dislocation was found by considering the crystal to be made up of a large number of slices each of which is perfect but which are displaced with respect to one another by a displacement function based on the elastic continuum model of a dislocation. This method of calculation was chosen because of its convenience in computer calculation and because it avoids the approximation required in the usual differential equation formulation of the dynamical theory for an imperfect crystal.



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