Numerical simulation of broad-area high-power semiconductor laser amplifiers

1997 ◽  
Vol 33 (12) ◽  
pp. 2240-2254 ◽  
Author(s):  
Zheng Dai ◽  
R. Michalzik ◽  
P. Unger ◽  
K.J. Ebeling
Keyword(s):  
Numerical Simulation ◽  
Semiconductor Laser ◽  
High Power ◽  
Broad Area ◽  
Power Semiconductor ◽  
Laser Amplifiers ◽  
Semiconductor Laser Amplifiers

High-power flared semiconductor laser amplifiers

1995 ◽  
Author(s):  
Mario Dagenais ◽  
Si H. Cho ◽  
Ping-Hui S. Yeh ◽  
Stephen H. Fox ◽  
R. Prakasam ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
High Power ◽  
Laser Amplifiers ◽  
Semiconductor Laser Amplifiers

scholarly journals PHOTOREFRACTIVE TECHNIQUES FOR DIODE LASER BEAM COMBINATION

1992 ◽  
Vol 01 (02) ◽  
pp. 431-445 ◽  
Author(s):  
STUART MacCORMACK ◽  
ROBERT W. EASON
Keyword(s):  
Semiconductor Laser ◽  
High Power ◽  
Single Mode ◽  
Signal Beam ◽  
Laser Array ◽  
Power Semiconductor ◽  
Laser Amplifiers ◽  
Single Mode Laser ◽  
Beam Combination ◽  
Diode Laser Beam

Techniques for high-power laser array beam combination processes involving photo-refractive materials are reviewed. Details of an all semiconductor laser scheme for the amplification and subsequent photorefractive beam clean-up of a diffraction limited single-mode laser output is presented. Powers in excess of 100 mW (>220 mW accounting for Fresnel losses) are obtained in a diffraction limited signal beam, corresponding to an array to diffraction limited beam transfer efficiency of 33%. Details of a reflection geometry phase conjugate master oscillator-power amplifier scheme which offers the possibility of power scaling between a number of high-power semiconductor laser amplifiers are presented. Using this technique, a 13-dB amplification of a diffraction limited signal beam is obtained using a commercially available, 10-stripe gain-guided device with no special coatings.

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