Low-threshold-current, high-quantum-efficiency 1.5 mu m GaInAs-GaInAsP GRIN-SCH single quantum well laser diodes

1991 ◽  
Vol 27 (6) ◽  
pp. 1790-1793 ◽  
Author(s):  
N. Matsumoto ◽  
A. Kasukawa ◽  
T. Namegaya ◽  
H. Okamoto
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Laser Diodes ◽  
Threshold Current ◽  
Single Quantum ◽  
Single Quantum Well ◽  
High Quantum Efficiency ◽  
High Quantum ◽  
Quantum Well Laser ◽  
Low Threshold

Low‐threshold (≤ 92 A/cm2) 1.6 μm strained‐layer single quantum well laser diodes optically pumped by a 0.8 μm laser diode

1990 ◽  
Vol 57 (16) ◽  
pp. 1608-1609 ◽  
Author(s):  
C. E. Zah ◽  
R. Bhat ◽  
K. W. Cheung ◽  
N. C. Andreadakis ◽  
F. J. Favire ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Laser Diodes ◽  
Single Quantum ◽  
Optically Pumped ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Quantum Well Laser ◽  
Low Threshold

AlGaInP single quantum well laser diodes

1995 ◽  
Author(s):  
David P. Bour ◽  
David W. Treat ◽  
K. J. Beernink ◽  
Ross D. Bringans
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Laser
Sign in / Sign up

Export Citation Format

Share Document