Estimation and Analysis of Higher-Order Harmonics in Advanced Integrated Circuits to Implement Noise-Free Future-Generation Micro- and Nanoelectromechanical Systems

This work deals with the analysis of spectrum generation from advanced integrated circuits in order to better understand how to suppress the generation of high harmonics, especially in a given frequency band, to design and implement noise-free systems. At higher frequencies, the spectral components of signals with sharp edges contain more energy. However, current closed-form expressions have become increasingly unwieldy to compute higher-order harmonics. The study of spectrum generation provides an insight into suppressing higher-order harmonics (10th order and above), especially in a given frequency band. In this work, we discussed the influence of transistor model quality and input signal on estimates of the harmonic contents of switching waveforms. Accurate estimates of harmonic contents are essential in the design of highly integrated micro- and nanoelectromechanical systems. This paper provides a comparative analysis of various flip-flop/latch topologies on different process technologies, i.e., 130 and 65 nm. An FFT plot of the simulated results signifies that the steeper the spectrum roll-off, the lesser the content of higher-order harmonics. Furthermore, the results of the comparison illustrate the improvement in the rise time, fall time, clock-Q delay and spectrum roll-off on the better selection of slow-changing input signals and more accurate transistor models.

A COMBINED APPROACH TO CREATING MODELS FOR H-TYPE TRANSISTORS MADE USING 0.18 MICRON SOI TECHNOLOGY

A technique has been developed for extracting the parameters of a compact H-transistor model based on BSIMSOI 4.5, taking into account parasitic capacitances, and also using the binning approach to take into account the non-standard dependence of the I–V characteristic on the geometrical dimensions of the transistor.

Circuit-Based Electrothermal Simulation of Multicellular SiC Power MOSFETs Using FANTASTIC

This paper discusses the benefits of an advanced highly-efficient approach to static and dynamic electrothermal simulations of multicellular silicon carbide (SiC) power MOSFETs. The strategy is based on a fully circuital representation of the device, which is discretized into an assigned number of individual cells, high enough to analyze temperature and current nonuniformities over the active area. The cells are described with subcircuits implementing a simple transistor model that accounts for the utmost influence of the traps at the SiC/SiO2 interface. The power-temperature feedback is emulated with an equivalent network corresponding to a compact thermal model automatically generated by the FANTASTIC tool from an accurate 3D mesh of the component under test. The resulting macrocircuit can be solved by any SPICE-like simulation program with low computational burden and rare occurrence of convergence issues.

CALCULATION OF NON-STANDARD W-PARAMETERS OF FOUR-POLE ON BIPOLAR TRANSISTORS

Improving the performance of microwave devices can be achieved both through the use of a fundamentally new element base, and through the use of new circuit designs. In this respect, the direction of use of the reactive properties of transistors as well as transistor structures with negative resistance for the construction of information-measuring systems and operating and computing devices of the microwave range is promising in this respect. In order to confirm the proposed methods, it is necessary to compare the results of the experimental studies using the proposed methods and means of measuring the W-parameters of real potentially unstable four-poles. As such four-poles it is proposed to use bipolar and transistors with a wide range of frequencies of potential instability. The paper develops mathematical models of W-parameters of such structures and evaluates their parameters in the frequency range. The active four-pole is a transistor model. Its W parameters can be determined either experimentally - for specific conditions or calculated - by using a physical transistor replacement circuit. In most cases, the calculation path is more acceptable because it allows to obtain analytical expressions for the four-pole, it is important in the analysis of the influence of various factors on the characteristics of the scheme under study. The inertial properties of the transistor are already manifested at relatively low frequencies and must be taken into account in practically the entire operating range of the transistor. The theoretical model holds up to frequencies f  2fт (where ft is the limit frequency) [1,3]. At higher frequencies, it is necessary to consider the parasitic reactive parameters of real transistors, first of all, the inductance of the terminals. A physically T-equivalent equivalent transistor replacement scheme was proposed by Pritchard in a simplified version [4]. It has several varieties, differing in the configuration of the circuit consisting of the resistance of the base material and the capacity of the collector junction. If we carefully consider and compare the T and U-shaped circuits of the transistor substitution, it can be noticed that they differ only in the configuration of their inne r part - the theoretical model. At high frequencies P and T, such circuits are not exact mutual equivalents. This is due to the approximation used in the transition from one circuit to another. However, the frequency characteristics of the circuits are very close. Each of them models the processes in the transistor with approximately the same accuracy, and in this sense they are equivalent.