Semiempirical relation for curved optical waveguide design in the edge-guided mode regime

1993 ◽  
Vol 11 (12) ◽  
pp. 1965-1969 ◽  
Author(s):  
R.S. Burton ◽  
T.E. Schlesinger
1999 ◽  
Vol 38 (18) ◽  
pp. 3917 ◽  
Author(s):  
Dhruv K. Pant ◽  
Rob D. Coalson ◽  
Marta I. Hernández ◽  
José Campos-Martínez

2007 ◽  
Vol 25 (11) ◽  
pp. 3511-3518 ◽  
Author(s):  
Y. Sakamaki ◽  
T. Saida ◽  
T. Hashimoto ◽  
H. Takahashi

1996 ◽  
Vol 74 (S1) ◽  
pp. 29-31 ◽  
Author(s):  
C. Fernando ◽  
S. Janz ◽  
R. Normandin ◽  
J. P. Noël ◽  
N. G. Tarr ◽  
...  

A Si1−xGex pin optical waveguide modulator operating at a wavelength of λ = 1.3 μm was designed and demonstrated. The free carrier absorption by carriers injected into the i region under high forward bias was used to attenuate the guided mode intensity. Numerical simulations indicate that this structure can operate at speeds up to 200 MHz. A maximum modulation depth of 85% was measured for a 2 mm long waveguide using a peak modulation current of 4200 A cm−2.


Author(s):  
Rene Landgraf ◽  
Toni Haugwitz ◽  
Robert Kirchner ◽  
Andreas Finn ◽  
Wolf-Joachim Fischer

2019 ◽  
Vol 446 ◽  
pp. 93-99 ◽  
Author(s):  
Md. Ahasan Habib ◽  
Md. Selim Reza ◽  
Lway Faisal Abdulrazak ◽  
Md. Shamim Anower

2005 ◽  
Author(s):  
Jianying Zhou ◽  
Xiaoqing Jiang ◽  
Jianyi Yang ◽  
Minghua Wang

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