Optical waveguide intensity modulator in silicon, based on carrier injection in a Si1−xGex pin heterostructure
Keyword(s):
A Si1−xGex pin optical waveguide modulator operating at a wavelength of λ = 1.3 μm was designed and demonstrated. The free carrier absorption by carriers injected into the i region under high forward bias was used to attenuate the guided mode intensity. Numerical simulations indicate that this structure can operate at speeds up to 200 MHz. A maximum modulation depth of 85% was measured for a 2 mm long waveguide using a peak modulation current of 4200 A cm−2.
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2011 ◽
Vol 20
(03)
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pp. 357-366
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Keyword(s):
2021 ◽
Vol 27
(3)
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pp. 1-11
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Keyword(s):
1991 ◽
Vol 167
(1)
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pp. K69-K72
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