Frequency-dependent characteristics of an ion-implanted GaAs MESFET with opaque gate under illumination

Journal of Lightwave Technology ◽

10.1109/50.822796 ◽

2000 ◽

Vol 18 (2) ◽

pp. 221-229 ◽

Author(s):

N.S. Roy ◽

B.B. Pal ◽

R.U. Khan

Keyword(s):

Frequency Dependent ◽

Gaas Mesfet ◽

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Ion-implanted planar-gate GaAs MESFET optimized for single-voltage-supply operation

Microwave and Optical Technology Letters ◽

10.1002/mop.1215 ◽

2001 ◽

Vol 30 (1) ◽

pp. 44-46

Author(s):

C. C. Meng ◽

J. W. Chen ◽

S. J. Liu

Keyword(s):

Voltage Supply ◽

Gaas Mesfet ◽

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A super low-noise ion-implanted planar GaAs MESFET MMIC amplifier

1996 IEEE MTT-S International Microwave Symposium Digest ◽

10.1109/mwsym.1996.511061 ◽

2002 ◽

Author(s):

T. Sawai ◽

M. Nishida ◽

T. Hirai ◽

K. Honda ◽

T. Yamaguchi ◽

...

Keyword(s):

Low Noise ◽

Gaas Mesfet ◽

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Optically-controlled ion-implanted GaAs MESFET characteristic with opaque gate

IEEE Transactions on Electron Devices ◽

10.1109/16.658814 ◽

1998 ◽

Vol 45 (1) ◽

pp. 78-84 ◽

Author(s):

Shubha ◽

B.B. Pal ◽

R.U. Khan

Keyword(s):

Gaas Mesfet ◽

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Investigation of doping profile effect on characteristics of ion-implanted GaAs MESFET

2010 11th International Conference and Seminar on Micro/Nanotechnologies and Electron Devices ◽

10.1109/edm.2010.5568833 ◽

2010 ◽

Author(s):

Alexander K. Shestakov ◽

Konstantin S. Zhuravlev ◽

Vadim S. Arykov ◽

Valery A. Kagadei

Keyword(s):

Doping Profile ◽

Gaas Mesfet ◽

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Ultra-low-noise fully ion-implanted GaAs-MESFET with Au/WSiN refractory metal gate

International Electron Devices Meeting 1991 [Technical Digest] ◽

10.1109/iedm.1991.235455 ◽

2002 ◽

Author(s):

K. Onodera ◽

K. Nishimura ◽

S. Sugitani ◽

K. Asai

Keyword(s):

Refractory Metal ◽

Low Noise ◽

Gaas Mesfet ◽

Ultra Low Noise ◽

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Systematic approach to modelling and parameter extraction of an ion-implanted GaAs MESFET

IEE Proceedings - Circuits Devices and Systems ◽

10.1049/ip-cds:19990167 ◽

1999 ◽

Vol 146 (2) ◽

pp. 95

Author(s):

H.L. Kwok ◽

Z.J. Wang

Keyword(s):

Systematic Approach ◽

Parameter Extraction ◽

Gaas Mesfet ◽

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Carrier frequency-dependent intrinsic parameters in an ion-implanted silicon photo-MESFET

Applied Physics A Solids and Surface ◽

10.1007/bf00624604 ◽

1987 ◽

Vol 44 (4) ◽

pp. 361-364 ◽

Author(s):

V. K. Singh ◽

B. B. Pal

Keyword(s):

Carrier Frequency ◽

Frequency Dependent ◽

Intrinsic Parameters ◽

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Backgating in Ion‐Implanted GaAs MESFET

Journal of The Electrochemical Society ◽

10.1149/1.2113666 ◽

1985 ◽

Vol 132 (11) ◽

pp. 2794-2795

Author(s):

Wade C. Tang ◽

Kerry S. Lowe ◽

I. Abdel‐Motaleb ◽

Lawrence Young

Keyword(s):

Gaas Mesfet ◽

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Threshold voltage of ion implanted GaAs MESFET

Electronics Letters ◽

10.1049/el:19820037 ◽

1982 ◽

Vol 18 (2) ◽

pp. 53 ◽

Author(s):

T. Mizutani ◽

S. Ishida ◽

T. Honda ◽

Y. Kawasaki

Keyword(s):

Threshold Voltage ◽

Gaas Mesfet ◽

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Design and fabrication of 5 Gb/s fully integrated OEIC receivers using direct ion implanted GaAs MESFET-MSM

1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4) ◽

10.1109/mwsym.1994.335154 ◽

2002 ◽

Author(s):

C.-G. Shih ◽

D. Barlage ◽

J.-S. Wang ◽

M. Feng

Keyword(s):

Fully Integrated ◽

Gaas Mesfet ◽

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