International Electron Devices Meeting 1991 [Technical Digest]
Latest Publications

TOTAL DOCUMENTS

228

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

0780302435

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Accurate and efficient two-dimensional modeling of boron implantation into single-crystal silicon

International Electron Devices Meeting 1991 [Technical Digest] ◽

10.1109/iedm.1991.235327 ◽

2002 ◽

Cited By ~ 5

Author(s):

K.M. Klein ◽

C. Park ◽

S.-H. Yang ◽

A.F. Tasch

Keyword(s):

Single Crystal ◽

Single Crystal Silicon ◽

Two Dimensional ◽

Crystal Silicon ◽

Dimensional Modeling ◽

Boron Implantation

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A 0.1 mu m-gate elevated source and drain MOSFET fabricated by phase-shifted lithography

International Electron Devices Meeting 1991 [Technical Digest] ◽

10.1109/iedm.1991.235269 ◽

2002 ◽

Cited By ~ 8

Author(s):

S. Kimura ◽

H. Noda ◽

D. Hisamoto ◽

E. Takeda

Keyword(s):

Elevated Source

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Advanced IC fabrication technology using reliable, small-size, and high-speed AlGaAs/GaAs HBTs

International Electron Devices Meeting 1991 [Technical Digest] ◽

10.1109/iedm.1991.235273 ◽

2002 ◽

Cited By ~ 5

Author(s):

T. Nittono ◽

K. Nagata ◽

Y. Yamauchi ◽

T. Makimura ◽

H. Ito ◽

...

Keyword(s):

High Speed ◽

Fabrication Technology

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A high-efficiency 59- to 64-GHz TWT for intersatellite communications

International Electron Devices Meeting 1991 [Technical Digest] ◽

10.1109/iedm.1991.235402 ◽

2002 ◽

Cited By ~ 3

Author(s):

J.D. Wilson ◽

P. Ramins ◽

D.A. Force ◽

H.C. Limburg ◽

I. Tammaru

Keyword(s):

High Efficiency

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A 7 mask CMOS-technology utilizing liquid phase selective oxide deposition

International Electron Devices Meeting 1991 [Technical Digest] ◽

10.1109/iedm.1991.235391 ◽

2002 ◽

Cited By ~ 2

Author(s):

K. Kanba ◽

T. Horiuchi ◽

T. Homma ◽

Y. Murao ◽

K. Okumura

Keyword(s):

Liquid Phase ◽

Cmos Technology ◽

Oxide Deposition

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A high speed 16 k gate CMOS gate array in thin SIMOX films

International Electron Devices Meeting 1991 [Technical Digest] ◽

10.1109/iedm.1991.235412 ◽

2002 ◽

Author(s):

T. Nishimura ◽

Y. Yamaguchi ◽

M. Shimizu ◽

K. Tsukamoto ◽

Y. Akasaka

Keyword(s):

High Speed ◽

Gate Array

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A 0.4 micron fully complementary BiCMOS technology for advanced logic and microprocessor applications

International Electron Devices Meeting 1991 [Technical Digest] ◽

10.1109/iedm.1991.235418 ◽

2002 ◽

Cited By ~ 15

Author(s):

S.W. Sun ◽

P.G.Y. Tsui ◽

B.M. Somero ◽

J. Klein ◽

F. Pintchovski ◽

...

Keyword(s):

Bicmos Technology

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Degradation of polysilicon TFTs during dynamic stress

International Electron Devices Meeting 1991 [Technical Digest] ◽

10.1109/iedm.1991.235404 ◽

2002 ◽

Cited By ~ 9

Author(s):

A.G. Lewis ◽

I.-W. Wu ◽

M. Hack ◽

A. Chiang ◽

R.H. Bruce

Keyword(s):

Dynamic Stress

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On-chip picosecond time-domain measurement of silicon bipolar transistor characteristics using integrated GaAs photoconductive devices

International Electron Devices Meeting 1991 [Technical Digest] ◽

10.1109/iedm.1991.235429 ◽

2002 ◽

Cited By ~ 1

Author(s):

G.D. Anderson ◽

R.W. Dutton ◽

J.D. Morse ◽

R.P. Mariella

Keyword(s):

Time Domain ◽

Bipolar Transistor ◽

On Chip

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The impact of scaling on hot-carrier degradation and supply voltage of deep-submicron NMOS transistors

International Electron Devices Meeting 1991 [Technical Digest] ◽

10.1109/iedm.1991.235338 ◽

2002 ◽

Cited By ~ 3

Author(s):

P. Woerlee ◽

P. Damink ◽

M. van Dort ◽

C. Juffermans ◽

C. de Kort ◽

...

Keyword(s):

Supply Voltage ◽

Deep Submicron ◽

Hot Carrier ◽

The Impact ◽

Nmos Transistors ◽

Hot Carrier Degradation

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International Electron Devices Meeting 1991 [Technical Digest]Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Accurate and efficient two-dimensional modeling of boron implantation into single-crystal silicon

A 0.1 mu m-gate elevated source and drain MOSFET fabricated by phase-shifted lithography

Advanced IC fabrication technology using reliable, small-size, and high-speed AlGaAs/GaAs HBTs

A high-efficiency 59- to 64-GHz TWT for intersatellite communications

A 7 mask CMOS-technology utilizing liquid phase selective oxide deposition

A high speed 16 k gate CMOS gate array in thin SIMOX films

A 0.4 micron fully complementary BiCMOS technology for advanced logic and microprocessor applications

Degradation of polysilicon TFTs during dynamic stress

On-chip picosecond time-domain measurement of silicon bipolar transistor characteristics using integrated GaAs photoconductive devices

The impact of scaling on hot-carrier degradation and supply voltage of deep-submicron NMOS transistors

International Electron Devices Meeting 1991 [Technical Digest]
Latest Publications