High efficiency and output power from second- and third-harmonic millimeter-wave InP-TED oscillators at frequencies above 170 GHz

1990 ◽  
Vol 11 (10) ◽  
pp. 439-441 ◽  
Author(s):  
A. Rydberg
Keyword(s):  
Output Power ◽  
Millimeter Wave ◽  
High Efficiency ◽  
Third Harmonic

High-Efficiency Millimeter-Wave Energy-Harvesting Systems With Milliwatt-Level Output Power

2017 ◽  
Vol 64 (6) ◽  
pp. 605-609 ◽  
Author(s):  
Med Nariman ◽  
Farid Shirinfar ◽  
Sudhakar Pamarti ◽  
Ahmadreza Rofougaran ◽  
Franco De Flaviis
Keyword(s):  
Energy Harvesting ◽  
Output Power ◽  
Millimeter Wave ◽  
Wave Energy ◽  
High Efficiency ◽  
Harvesting Systems

scholarly journals High-Efficiency Millimeter-wave Single-ended and Differential Fundamental Oscillators in CMOS

2020 ◽  
Author(s):  
Hao Wang ◽  
Jingjun Chen ◽  
James Do ◽  
Hooman Rashtian ◽  
Xiaoguang Liu
Keyword(s):  
Output Power ◽  
Millimeter Wave ◽  
High Efficiency ◽  
Cmos Technology ◽  
Voltage Controlled Oscillator ◽  
Active Device ◽  
Tuning Method ◽  
Passive Devices ◽  
Transformer Design ◽  
Full Consideration

This paper reports an approach to designing compact high efficiency millimeter-wave fundamental oscillators operating above the fmax=2 of the active device. The approach takes full consideration of the nonlinearity of the active device and the finite quality factor of the passive devices to provide an accurate and optimal oscillator design in terms of the output power and efficiency. The 213-GHz single-ended and differential fundamental oscillators in 65-nm CMOS technology are presented to demonstrate the effectiveness of the proposed method. Using a compact capacitive transformer design, the single-ended oscillator achieves 0.79-mW output power per transistor (16 μm) at 1.0-V supply and a peak dc-to-RF efficiency of 8.02% (VDD=0.80 V) within a core area of 0.0101mm2, and the measured phase noise is -93:4 dBc/Hz at 1-MHz offset. The differential oscillator exhibits approximately the same performance. A 213-GHz fundamental voltage-controlled oscillator (VCO) with bulk tuning method is also developed in this work. The measured peak efficiency of the VCO is 6.02% with a tuning rang of 2.3% at 0.6-V supply.

scholarly journals High-Efficiency Millimeter-wave Single-ended and Differential Fundamental Oscillators in CMOS

2020 ◽  
Author(s):  
Hao Wang ◽  
Jingjun Chen ◽  
James Do ◽  
Hooman Rashtian ◽  
Xiaoguang Liu
Keyword(s):  
Output Power ◽  
Millimeter Wave ◽  
High Efficiency ◽  
Cmos Technology ◽  
Voltage Controlled Oscillator ◽  
Active Device ◽  
Tuning Method ◽  
Passive Devices ◽  
Transformer Design ◽  
Full Consideration

This paper reports an approach to designing compact high efficiency millimeter-wave fundamental oscillators operating above the fmax=2 of the active device. The approach takes full consideration of the nonlinearity of the active device and the finite quality factor of the passive devices to provide an accurate and optimal oscillator design in terms of the output power and efficiency. The 213-GHz single-ended and differential fundamental oscillators in 65-nm CMOS technology are presented to demonstrate the effectiveness of the proposed method. Using a compact capacitive transformer design, the single-ended oscillator achieves 0.79-mW output power per transistor (16 μm) at 1.0-V supply and a peak dc-to-RF efficiency of 8.02% (VDD=0.80 V) within a core area of 0.0101mm2, and the measured phase noise is -93:4 dBc/Hz at 1-MHz offset. The differential oscillator exhibits approximately the same performance. A 213-GHz fundamental voltage-controlled oscillator (VCO) with bulk tuning method is also developed in this work. The measured peak efficiency of the VCO is 6.02% with a tuning rang of 2.3% at 0.6-V supply.

High Power High Efficiency Millimeter Wave TED's with Reverse-Biased Hetero-Junction Cathode Contact

1985 ◽  
Author(s):  
M.R. Friscourt ◽  
P.A. Rolland ◽  
J.P. Duchemin ◽  
J. Lacombe
Keyword(s):  
Millimeter Wave ◽  
High Power ◽  
High Efficiency

MILLIMETER WAVE TO TERAHERTZ IN CMOS

2009 ◽  
Vol 19 (01) ◽  
pp. 55-67 ◽  
Author(s):  
K. K. O ◽  
S. SANKARAN ◽  
C. CAO ◽  
E.-Y. SEOK ◽  
D. SHIM ◽  
...  
Keyword(s):  
Output Power ◽  
Millimeter Wave ◽  
Fundamental Mode ◽  
Cmos Circuits ◽  
Noise Performance ◽  
Mos Transistors

The feasibility of CMOS circuits operating at frequencies in the upper millimeter wave and low sub-millimeter frequency regions has been demonstrated. A 140-GHz fundamental mode VCO in 90-nm CMOS, a 410-GHz push-push VCO in 45-nm CMOS, and a 180-GHz detector circuit in 130-nm CMOS have been demonstrated. With the continued scaling of MOS transistors, 1-THz CMOS circuits will be possible. Though these results are significant, output power of signal generators must be increased and acceptable noise performance of detectors must be achieved in order to demonstrate the applicability of CMOS for implementing practical terahertz systems.

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