Characterization of an InGaAs-GaAs-AlGaAs strained-layer distributed-feedback ridge-waveguide quantum-well heterostructure laser

1992 ◽  
Vol 4 (4) ◽  
pp. 296-299 ◽  
Author(s):  
L.M. Miller ◽  
K.J. Beernink ◽  
J.T. Verdeyen ◽  
J.J. Coleman ◽  
J.S. Hughes ◽  
...  
Keyword(s):  
Quantum Well ◽  
Ridge Waveguide ◽  
Distributed Feedback ◽  
Strained Layer ◽  
Heterostructure Laser

InGaAs–GaAs–AlGaAs strained-layer distributed feedback ridge waveguide quantum well heterostructure laser array

1991 ◽  
Vol 27 (21) ◽  
pp. 1943 ◽  
Author(s):  
L.M. Miller ◽  
K.J. Beernink ◽  
J.T. Verdeyen ◽  
J.J. Coleman ◽  
J.S. Hughes ◽  
...  
Keyword(s):  
Quantum Well ◽  
Ridge Waveguide ◽  
Distributed Feedback ◽  
Laser Array ◽  
Strained Layer ◽  
Heterostructure Laser

Four wavelength distributed feedback ridge waveguide quantum‐well heterostructure laser array

1992 ◽  
Vol 61 (25) ◽  
pp. 2964-2966 ◽  
Author(s):  
L. M. Miller ◽  
K. J. Beernink ◽  
J. S. Hughes ◽  
S. G. Bishop ◽  
J. J. Coleman
Keyword(s):  
Quantum Well ◽  
Ridge Waveguide ◽  
Distributed Feedback ◽  
Laser Array ◽  
Heterostructure Laser

Phase‐locked ridge waveguide InGaAs‐GaAs‐AlGaAs strained‐layer quantum well heterostructure laser arrays

1991 ◽  
Vol 59 (25) ◽  
pp. 3222-3224 ◽  
Author(s):  
K. J. Beernink ◽  
L. M. Miller ◽  
T. M. Cockerill ◽  
J. J. Coleman
Keyword(s):  
Quantum Well ◽  
Ridge Waveguide ◽  
Laser Arrays ◽  
Strained Layer ◽  
Heterostructure Laser

A distributed feedback ridge waveguide quantum well heterostructure laser

1991 ◽  
Vol 3 (1) ◽  
pp. 6-8 ◽  
Author(s):  
L.M. Miller ◽  
J.T. Verdeyen ◽  
J.J. Coleman ◽  
R.P. Bryan ◽  
J.J. Alwan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Ridge Waveguide ◽  
Distributed Feedback ◽  
Heterostructure Laser

Ridge waveguide injection laser with a GaInAs strained‐layer quantum well (λ=1 μm)

1987 ◽  
Vol 50 (12) ◽  
pp. 714-716 ◽  
Author(s):  
S. E. Fischer ◽  
D. Fekete ◽  
G. B. Feak ◽  
J. M. Ballantyne
Keyword(s):  
Quantum Well ◽  
Ridge Waveguide ◽  
Injection Laser ◽  
Strained Layer

Characterization of GaS-Passivated Quantum-Well Laser Diodes

1999 ◽  
Vol 573 ◽  
Author(s):  
L. G. Vaughn ◽  
T. C. Newell ◽  
L. F. Lester ◽  
A. N. Macinnes
Keyword(s):  
Quantum Well ◽  
Radiative Recombination ◽  
Laser Diodes ◽  
Surface States ◽  
Ridge Waveguide ◽  
Pulsed Power ◽  
Quantum Well Laser ◽  
Heating Effects ◽  
The Impact

ABSTRACTThe degradation of AlGaAs/GaAs diode laser performance during operation is typically due to catastrophic optical damage of the facets caused when thermal runaway occurs. These heating effects are due to the presence of non-radiative recombination sites at and near the facets. MOCVD GaS is deposited on the facets of 825-nm ridge waveguide AlGaAs/GaAs quantumwell laser diodes as an electronic passivation to reduce the number of surface states available for non-radiative recombination. For passivated devices, a peak pulsed power nearly double that of unpassivated devices was achieved. The passivated devices also exhibit a longer lifetime before degradation. The impact of the passivation process on other optical characteristics of the laser diodes will also be discussed.

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