Optical and microwave performance of GaAs-AlGaAs and strained layer InGaAs-GaAs-AlGaAs graded index separate confinement heterostructure single quantum well lasers

S.D. Offsey; W.J. Shcaff; P.J. Tasker; L.F. Eastman

doi:10.1109/68.47025

Optical and microwave performance of GaAs-AlGaAs and strained layer InGaAs-GaAs-AlGaAs graded index separate confinement heterostructure single quantum well lasers

IEEE Photonics Technology Letters ◽

10.1109/68.47025 ◽

1990 ◽

Vol 2 (1) ◽

pp. 9-11 ◽

Cited By ~ 53

Author(s):

S.D. Offsey ◽

W.J. Shcaff ◽

P.J. Tasker ◽

L.F. Eastman

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Strained Layer ◽

Graded Index

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Optical and microwave performance of GaAs-AlGaAs and strained-layer InGaAs-GaAs-AlGaAs graded-index separate-confinement heterostructure single quantum well lasers

10.1109/cornel.1989.79851 ◽

2003 ◽

Author(s):

S.D. Offsey ◽

W.J. Schaff ◽

P.J. Tasker ◽

W.D. Braddock ◽

L.F. Eastman

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Strained Layer ◽

Graded Index

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Strained-layer InGaAs-GaAs-AlGaAs graded-index separate-confinement single quantum well lasers grown by molecular-beam epitaxy

IEEE Transactions on Electron Devices ◽

10.1109/16.43714 ◽

1989 ◽

Vol 36 (11) ◽

pp. 2608

Author(s):

S.D. Offsey ◽

W.J. Schaff ◽

P.J. Tasker ◽

L.F. Eastman

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Strained Layer ◽

Graded Index

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Strained‐layer InGaAs‐GaAs‐AlGaAs graded‐index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.101083 ◽

1989 ◽

Vol 54 (25) ◽

pp. 2527-2529 ◽

Cited By ~ 30

Author(s):

S. D. Offsey ◽

W. J. Schaff ◽

P. J. Tasker ◽

H. Ennen ◽

L. F. Eastman

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Strained Layer ◽

Graded Index

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IVB-2 facet-coated graded-index separate-confinement-heterostructure single-quantum-well lasers having low degradation rates (<1%/kh) at 70°C

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1983.21382 ◽

1983 ◽

Vol 30 (11) ◽

pp. 1592-1593

Author(s):

R.D. Dupuis ◽

R.L. Hartman ◽

F.R. Nash

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Graded Index ◽

Degradation Rates

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The effects of strain on the threshold current density in InGaAsP/InP strained‐layer single‐quantum‐well lasers

Journal of Applied Physics ◽

10.1063/1.357468 ◽

1994 ◽

Vol 76 (6) ◽

pp. 3250-3254 ◽

Cited By ~ 18

Author(s):

Shunji Seki ◽

Kiyoyuki Yokoyama

Keyword(s):

Quantum Well ◽

Current Density ◽

Threshold Current ◽

Threshold Current Density ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Strained Layer

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Effects of Temperature and Well Composition on Threshold Current Density for Compressive Strained-Layer AlxGayIn1-x-yAs Single Quantum Well Lasers

IEEJ Transactions on Electronics Information and Systems ◽

10.1541/ieejeiss.133.1139 ◽

2013 ◽

Vol 133 (6) ◽

pp. 1139-1144

Author(s):

Durga Prasad Sapkota ◽

Madhu Sudan Kayastha ◽

Koichi Wakita

Keyword(s):

Quantum Well ◽

Current Density ◽

Threshold Current ◽

Threshold Current Density ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Strained Layer ◽

Effects Of Temperature

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Facet-coated graded-index separate-confinement-heterostructure single-quantum-well lasers having low degradation rates (<1 percent/kh) at 70°C

IEEE Electron Device Letters ◽

10.1109/edl.1983.25735 ◽

1983 ◽

Vol 4 (8) ◽

pp. 286-288 ◽

Cited By ~ 16

Author(s):

R.D. Dupuis ◽

R.L. Hartman ◽

F.R. Nash

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Graded Index ◽

Degradation Rates

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Temperature dependence of optical gain, quantum efficiency, and threshold current in GaAs/GaAlAs graded-index separate-confinement heterostructure single-quantum-well lasers

IEEE Journal of Quantum Electronics ◽

10.1109/3.35226 ◽

1989 ◽

Vol 25 (9) ◽

pp. 2007-2012 ◽

Cited By ~ 10

Author(s):

L.D. Zhu ◽

B.Z. Zheng ◽

G.A.B. Feak

Keyword(s):

Quantum Well ◽

Temperature Dependence ◽

Quantum Efficiency ◽

Optical Gain ◽

Threshold Current ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Graded Index

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Very low threshold graded-index separate-confinement-heterostructure strained InGaAsP single-quantum-well lasers

Electronics Letters ◽

10.1049/el:19940137 ◽

1994 ◽

Vol 30 (3) ◽

pp. 243-244 ◽

Cited By ~ 6

Author(s):

N. Yamamoto ◽

K. Yokoyama ◽

M. Yamamoto ◽

T. Yamanaka

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Graded Index ◽

Low Threshold

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Low‐threshold InGaAs/GaAs strained layer single quantum well lasers with simple ridge waveguide structure

Journal of Applied Physics ◽

10.1063/1.347473 ◽

1991 ◽

Vol 69 (11) ◽

pp. 7892-7894 ◽

Cited By ~ 12

Author(s):

C. P. Chao ◽

S. Y. Hu ◽

K‐K. Law ◽

B. Young ◽

J. L. Merz ◽

...

Keyword(s):

Quantum Well ◽

Ridge Waveguide ◽

Waveguide Structure ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Strained Layer ◽

Low Threshold ◽

Ridge Waveguide Structure

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Optical and microwave performance of GaAs-AlGaAs and strained layer InGaAs-GaAs-AlGaAs graded index separate confinement heterostructure single quantum well lasers

Optical and microwave performance of GaAs-AlGaAs and strained-layer InGaAs-GaAs-AlGaAs graded-index separate-confinement heterostructure single quantum well lasers

Strained-layer InGaAs-GaAs-AlGaAs graded-index separate-confinement single quantum well lasers grown by molecular-beam epitaxy

Strained‐layer InGaAs‐GaAs‐AlGaAs graded‐index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy

IVB-2 facet-coated graded-index separate-confinement-heterostructure single-quantum-well lasers having low degradation rates (&lt;1%/kh) at 70°C

The effects of strain on the threshold current density in InGaAsP/InP strained‐layer single‐quantum‐well lasers

Effects of Temperature and Well Composition on Threshold Current Density for Compressive Strained-Layer AlxGayIn1-x-yAs Single Quantum Well Lasers

Facet-coated graded-index separate-confinement-heterostructure single-quantum-well lasers having low degradation rates (&lt;1 percent/kh) at 70°C

Temperature dependence of optical gain, quantum efficiency, and threshold current in GaAs/GaAlAs graded-index separate-confinement heterostructure single-quantum-well lasers

Very low threshold graded-index separate-confinement-heterostructure strained InGaAsP single-quantum-well lasers

Low‐threshold InGaAs/GaAs strained layer single quantum well lasers with simple ridge waveguide structure

IVB-2 facet-coated graded-index separate-confinement-heterostructure single-quantum-well lasers having low degradation rates (<1%/kh) at 70°C

Facet-coated graded-index separate-confinement-heterostructure single-quantum-well lasers having low degradation rates (<1 percent/kh) at 70°C