V-band monolithic low-noise amplifiers using ion-implanted n/sup +/-self-aligned GaAs MESFETs

1999 ◽  
Vol 9 (4) ◽  
pp. 148-150 ◽  
Author(s):  
K. Onodera ◽  
S. Sugitani ◽  
K. Nishimura ◽  
M. Tokumitsu
1988 ◽  
Vol 36 (12) ◽  
pp. 1598-1603 ◽  
Author(s):  
K.H.G. Duh ◽  
Pane-Chane Chao ◽  
P.M. Smith ◽  
L.F. Lester ◽  
B.R. Lee ◽  
...  

Electronics ◽  
2019 ◽  
Vol 8 (11) ◽  
pp. 1222 ◽  
Author(s):  
Longhi ◽  
Pace ◽  
Colangeli ◽  
Ciccognani ◽  
Limiti

An overview of applicable technologies and design solutions for monolithic microwave integrated circuit (MMIC) low-noise amplifiers (LNAs) operating at millimeter-wave are provided in this paper. The review starts with a brief description of the targeted applications and corresponding systems. Advanced technologies are presented highlighting potentials and drawbacks related to the considered possibilities. Design techniques, applicable to different requirements, are presented and analyzed. An LNA operating at V-band (59–66 GHz) is designed and tested following the presented guidelines, demonstrating state-of-the-art results in terms of noise figure (average NF < 2 dB). A state-of-the-art table, reporting recent results available in open literature on this topic, is provided and examined, focusing on room temperature operation and performance in cryogenic environment. Finally, trends versus frequency and perspectives are outlined.


2000 ◽  
Vol 48 (7) ◽  
pp. 1283-1286 ◽  
Author(s):  
J.M. Tanskanen ◽  
P. Kangaslahti ◽  
H. Ahtola ◽  
P. Jukkala ◽  
T. Karttaavi ◽  
...  

Author(s):  
S. Vaughn ◽  
K. White ◽  
U.K. Mishra ◽  
M.J. Delaney ◽  
P. Greiling ◽  
...  

Author(s):  
C.L. Lau ◽  
M. Feng ◽  
G.W. Wang ◽  
T. Lepkowski ◽  
Y. Chang ◽  
...  

Author(s):  
G. Metze ◽  
A. Cornfeld ◽  
J. Singer ◽  
H. Carlson ◽  
E. Chang ◽  
...  

Author(s):  
Mikko Varonen ◽  
Xiaobing Mei ◽  
Stephen Sarkozy ◽  
Lorene Samoska ◽  
Pekka Kangaslahti ◽  
...  

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