RF noise model for AlGaN/GaN HEMT

A 2D hydrodynamic model based on modified Langevin forces for terminal current noise in the RF range is presented for Si and SiGe devices, where all transport and noise parameters are generated by full-band Monte Carlo simulations under bulk conditions and stored in lookup tables. Since these tables have to be built only once, the accuracy of the noise model is improved without increasing the CPU time compared to models based on analytical expressions for the parameters. The accuracy of the noise model is assessed by comparison with the Monte Carlo device model and good agreement of both models is found for diffusion and generation noise. The terminal current noise of a realistic SiGe HBT is investigated and it is found that hole diffusion noise has a strong impact on the collector current noise. The limitations of the thermodynamic model, a compact model for noise, are explored by comparison with the hydrodynamic model.

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Improved artificial neural network RF noise model for MOSFETs operating in avalanche region

Electronics Letters ◽

10.1049/el.2015.1607 ◽

2016 ◽

Vol 52 (3) ◽

pp. 232-234 ◽

Cited By ~ 2

Author(s):

Chie‐In Lee ◽

Yan‐Ting Lin ◽

Wei‐Cheng Lin

Keyword(s):

Neural Network ◽

Artificial Neural Network ◽

Noise Model ◽

Artificial Neural ◽

Rf Noise

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GaN HEMT Noise Model Based on Electromagnetic Simulations

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.2015.2447542 ◽

2015 ◽

Vol 63 (8) ◽

pp. 2498-2508 ◽

Cited By ~ 33

Author(s):

Andrea Nalli ◽

Antonio Raffo ◽

Giovanni Crupi ◽

Sara D'Angelo ◽

Davide Resca ◽

...

Keyword(s):

Noise Model ◽

Gan Hemt ◽

Model Based ◽

Electromagnetic Simulations

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Numerical noise model for the AlGaN/GaN HEMT

2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535) ◽

10.1109/mwsym.2004.1339166 ◽

2004 ◽

Cited By ~ 1

Author(s):

Sungjae Lee ◽

K.J. Webb

Keyword(s):

Noise Model ◽

Gan Hemt ◽

Numerical Noise

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Modeling Nonlinear White Noise in GaN HEMT Devices

Frequenz ◽

10.1515/freq-2014-0121 ◽

2014 ◽

Vol 69 (1-2) ◽

pp. 47-55

Author(s):

Matthias Rudolph ◽

Laurent Escotte ◽

Ralf Doerner

Keyword(s):

Good Accuracy ◽

Drain Current ◽

Noise Model ◽

Noise Prediction ◽

Noise Sources ◽

Nonlinear Excitation ◽

New Approach ◽

Gan Hemt ◽

Nonlinear Noise ◽

Noise Models

Abstract This paper compares new bias-dependent descriptions for the Pucel and Pospieszalski noise models for GaN HEMT devices. It is proposed to replace the traditional descriptions of the noise sources by general noise powers linked to the drain current. A well-behaved bias dependence of the new parameters is observed for both models the new approach reduces uncertainty in the nonlinear noise model extraction. Finally, the performance of the bias-dependent noise models under nonlinear excitation is investigated and it can be shown that Pucel and Pospieszalski models yield comparably good accuracy in noise prediction.

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