HYDRODYNAMIC MODELING OF RF NOISE FOR SILICON-BASED DEVICES

2003 ◽  
Vol 13 (03) ◽  
pp. 823-848
Author(s):  
CHRISTOPH JUNGEMANN ◽  
BURKHARD NEINHÜS ◽  
BERND MEINERZHAGEN
Keyword(s):  
Monte Carlo ◽  
Hydrodynamic Model ◽  
Noise Model ◽  
Current Noise ◽  
Strong Impact ◽  
Collector Current ◽  
Sige Hbt ◽  
Silicon Based ◽  
Rf Noise ◽  
Analytical Expressions

A 2D hydrodynamic model based on modified Langevin forces for terminal current noise in the RF range is presented for Si and SiGe devices, where all transport and noise parameters are generated by full-band Monte Carlo simulations under bulk conditions and stored in lookup tables. Since these tables have to be built only once, the accuracy of the noise model is improved without increasing the CPU time compared to models based on analytical expressions for the parameters. The accuracy of the noise model is assessed by comparison with the Monte Carlo device model and good agreement of both models is found for diffusion and generation noise. The terminal current noise of a realistic SiGe HBT is investigated and it is found that hole diffusion noise has a strong impact on the collector current noise. The limitations of the thermodynamic model, a compact model for noise, are explored by comparison with the hydrodynamic model.

Determination of the trap energy levels and the emitter area dependence of noise in polyemitter bipolar junction transistors from generation–recombination noise spectra

1992 ◽  
Vol 70 (10-11) ◽  
pp. 949-958 ◽  
Author(s):  
A. Ng ◽  
M. J. Deem ◽  
John Ilowski
Keyword(s):  
Energy Levels ◽  
Absolute Temperature ◽  
Least Square ◽  
Noise Model ◽  
Current Noise ◽  
Noise Power ◽  
Bipolar Junction Transistors ◽  
Collector Current ◽  
Trap Energy ◽  
Base Current

A noise model for bipolar junction transistors based on generation–recombination (GR) noise originating from the traps located in the space-charge region of the emitter–base junction is derived. The model indicates that the current noise power owing to traps located inside the base–emitter depletion region should be proportional to the square of the collector current and inversely proportional to the emitter area. In addition, the model shows how the activation energy of a trap and the quasi-Fermi level can be related to the rising and falling edges of a GR noise spectrum by plotting the noise power against the reciprocal absolute temperature. Predictions from the noise model were compared with experimental data using seven bipolar transistors with emitter areas varying from 1.6 to 144 μm2. The noise measurements were performed at 10 temperatures between 10 and 100 °C and at different biasing currents. From the measurements, the base current noise power spectra [Formula: see text] is found to be proportional to the square of the base current (ib) and inversely proportional to the square of the emitter area. By plotting the noise power against the reciprocal temperature on a log–log graph and performing a linear least square fit on part of the data, a trap energy level of 821 meV above the valence band was determined.

A generalized hydrodynamic model capable of incorporating Monte Carlo results (LDD MOS devices)

2003 ◽  
Author(s):  
R. Thoma ◽  
A. Emunds ◽  
B. Meinerzhagen ◽  
H. Peifer ◽  
W.L. Engl
Keyword(s):  
Monte Carlo ◽  
Hydrodynamic Model ◽  
Mos Devices

RF noise simulation for submicron MOSFET's based on hydrodynamic model

2003 ◽  
Author(s):  
Jung-Suk Goo ◽  
Chang-Hoon Choi ◽  
E. Morifuji ◽  
H.S. Momose ◽  
Zhiping Yu ◽  
...  
Keyword(s):  
Hydrodynamic Model ◽  
Noise Simulation ◽  
Rf Noise

Ship Damage Stability Approval Document Generation by a Amonte Carlo Method

2021 ◽  
Author(s):  
Stefan Krüger ◽  
Katja Aschenberg
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Information Needs ◽  
Computational Time ◽  
Strong Impact ◽  
Design Phase ◽  
Efficient Design ◽  
Stability Problems ◽  
Initial Design ◽  
Damage Stability

Abstract The revised SOLAS 2020 damage stability regulations have a strong impact on possible future ship designs. To cope with these requirements, damage stability investigations must become a central part of the initial design phase, and many internal subdivision concepts need to be investigated. Unfortunately, if damage stability calculations are performed in the classical way, they are very time consuming with respect to modelling and computational time. This fact has impeded the consequent subdivision optimization in the past. Therefore, a simulation procedure for damage stability problems was developed which treats damage stability as a stochastic process which was modeled by a Monte Carlo simulation. If statistical damage distributions are once known, the Monte Carlo simulation delivers a population of damages which can be automatically related to certain damage cases. These damage cases can then be investigated with respect to their survivability. Applying this principle to damage stability problems reduces the computational effort drastically where at the same time no more manual modelling is required. This development does especially support the initial design phase of the compartmentation and leads to a safer and more efficient design. If this very efficient simulation principle shall now also be used after the initial design phase for the generation of approval documents, additional information needs to be generated by the simulation method which is not directly obtained during the simulation: This includes detailed individual probabilities in all three directions and the integration of all damage cases into predefined damage zones. This results in fact in a kind of reverse engineering of the manual damage stability process to automatically obtain this required information. It can be demonstrated that the time to obtain the final documents for the damage stability approval can be drastically reduced by implementing this principle.

Methods for Evaluating the Influence of Non-Sinusidal Voltage on Capacitor Units in Power Supply Systems

2021 ◽  
Vol 64 (2) ◽  
pp. 86-92
Author(s):  
Eduard Kourennyi ◽  
◽  
Alexander Bulgakov ◽  
Arkady Kolomytsev ◽  
◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Power Supply ◽  
Voltage Pulse ◽  
Impulse Noise ◽  
Noise Model ◽  
Current Noise ◽  
Practical Calculation ◽  
Sinusoidal Voltage ◽  
Useful Signal ◽  
Supply Systems

The problems of evaluating the EMC for capacitor units (CU) in power supply systems are considered. The admissible value of the current non-sinusoidal component for the CU was found, it corresponds to the actual standards. The dynamic model of the «supply line – CU» circuit has been substantiated. An equivalent circuit is given. A non-sinusoidal signal is considered as the sum of a sinusoidal and non-sinusoidal component. As a non-sinusoidal component, a voltage pulse noise model with oppositely polar periodic rectangular pulses and pauses was used. Two approaches to determine the useful signal are considered. A physically substantiated interpretation of the concept of non-sinusoidal voltage is proposed for impulse noise. Expressions are given to determine the current noise of the CU. An example of the practical calculation of voltage and current distortion is given. The graphs of the voltage impulse noise and the resulting current noise are shown. An algorithm has been developed to evaluate the effectiveness of means for reducing impulse noise.

1/fγ DRAIN CURRENT NOISE MODEL IN ULTRATHIN OXIDE MOSFETS

2004 ◽  
Vol 04 (02) ◽  
pp. L297-L307 ◽  
Author(s):  
JONGHWAN LEE ◽  
GIJS BOSMAN
Keyword(s):  
Drain Current ◽  
Trapping Efficiency ◽  
Doping Profile ◽  
Noise Model ◽  
Current Noise ◽  
Device Structure ◽  
Processing Technologies ◽  
New Device ◽  
Noise Characteristics ◽  
Ultrathin Oxide

A 1/fγ drain current noise model for deep-submicron MOSFETs with ultrathin oxide is presented. Based on the number and correlated mobility fluctuation mechanisms, the model is derived incorporating a tunneling assisted-thermally activated process and a more realistic trap distribution inside the gate oxide layer. The effects of the device structure and processing technologies on the noise characteristics are taken into consideration through a quadratic mobility degradation factor, a parasitic resistance, a doping profile, and trap-related parameters. For ultrathin oxide MOSFETs, the trapping efficiency ratio and the scattering rate are expressed in terms of the trap distance and the inversion carrier density, enabling an accurate prediction of the noise behavior. From quantitative results simulated with extracted data, it is shown that the new model is applicable to design future CMOS devices and new device processing technologies, and is suitable to be implemented in circuit simulators.

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