Multiple wavelength and wavelength switchable actively mode-locked laser based on semiconductor optical amplifier

2004 ◽  
Author(s):  
J. He ◽  
K.T. Chan
Keyword(s):  
Semiconductor Optical Amplifier ◽  
Optical Amplifier ◽  
Multiple Wavelength ◽  
Mode Locked Laser

Swept-Source OCT System Based on a Polarization-Dependent Semiconductor Optical Amplifier-Enabled Fourier Domain Mode Locked Laser

2013 ◽  
Vol 710 ◽  
pp. 447-451
Author(s):  
Huai Ying Shang ◽  
Li Huo ◽  
Yuan Peng Wu ◽  
Cai Yun Lou
Keyword(s):  
Output Power ◽  
Semiconductor Optical Amplifier ◽  
Optical Amplifier ◽  
Spot Size ◽  
Fourier Domain ◽  
Swept Source ◽  
Saturation Power ◽  
Swept Source Oct ◽  
Oct Imaging ◽  
Mode Locked Laser

We demonstrate a swept-source OCT system based on a polorization-dependent semiconductor optical amplifier (SOA)-enabled Fourier Domain Mode Locked laser (FDML). The broad bandwidth and high saturation power of the semiconductor optical amplifier enables single semiconductor optical amplifier operation with enough bandwidth and output power. The FDML generates ~32mW output power at 45kHz sweep rates, with a tuning range of 115 nm centered at 1326 nm. Using the SOA-enabled FDML laser, ~12.9μm axial resolution,9μm transverse spot size and 105dB sensitivity are achieved. OCT imaging of biological sample is also demonstrated.

Frequency Encoded All Optical Tri-state Logic Gates NOT and NAND Using Semiconductor Optical Amplifier Based Interferometric Switches

2020 ◽  
Vol 10 (4) ◽  
pp. 369-380
Author(s):  
K. Maji ◽  
K. Mukherjee ◽  
A. Raja
Keyword(s):  
Semiconductor Optical Amplifier ◽  
Extinction Ratio ◽  
Optical Power ◽  
Logic Gates ◽  
Optical Amplifier ◽  
All Optical ◽  
State Frequency ◽  
Spontaneous Noise ◽  
First Time ◽  
Practical Feasibility

All optical tri-state frequency encoded logic gates NOT and NAND are proposed and numerically investigated using TOAD based interferometric switch for the first time to the best of our knowledge. The optical power spectrum, extinction ratio, contrast ration, and amplified spontaneous noise are calculated to analyze and confirm practical feasibility of the gates. The proposed device works for low switching energy and has high contrast and extinction ratio as indicated in this work.

Polarization rotation-based all-optical AND gate using single semiconductor optical amplifier and implementation of a majority gate

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Ashif Raja ◽  
Kousik Mukherjee ◽  
Jitendra Nath Roy
Keyword(s):  
Semiconductor Optical Amplifier ◽  
Extinction Ratio ◽  
Contrast Ratio ◽  
Optical Amplifier ◽  
Majority Voting ◽  
Polarization Rotation ◽  
All Optical ◽  
Eye Opening ◽  
Amplified Spontaneous Emission Noise ◽  
Quality Factor Q

Abstract Semiconductor optical amplifier-based polarization rotation is utilized in designing all-optical AND gate at 100 Gbps. The AND gate shows high extinction ratio (ER ∼ 15 dB), contrast ratio (CR ∼ 18 dB) and quality factor (Q-factor ∼ 16 dB). The effect of the amplified spontaneous emission noise on the performances is also investigated. The AND gate has relative eye opening (REO) varying from 93.52 to 97.1% for 10–30 dB unsaturated gain. Using the AND gate a majority voting gate is designed and analyzed and has Q ∼ 11.7 dB with REO ∼ 91%.

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