Quantum interference of the non-degenerate photon pairs in silicon nanowire

Author(s):  
Jie Shao ◽  
Yu Yu ◽  
Yi Wang
2021 ◽  
Author(s):  
Sunil Mittal ◽  
Venkata Vikram Orre ◽  
Elizabeth A. Goldschmidt ◽  
Mohammad Hafezi

2003 ◽  
Vol 67 (2) ◽  
Author(s):  
H. de Riedmatten ◽  
I. Marcikic ◽  
W. Tittel ◽  
H. Zbinden ◽  
N. Gisin

2007 ◽  
Vol 3 (8) ◽  
pp. 538-541 ◽  
Author(s):  
P. Maunz ◽  
D. L. Moehring ◽  
S. Olmschenk ◽  
K. C. Younge ◽  
D. N. Matsukevich ◽  
...  

2010 ◽  
Vol 283 (4) ◽  
pp. 551-555 ◽  
Author(s):  
Fu-Yuan Wang ◽  
Bao-Sen Shi ◽  
Guang-Can Guo

2010 ◽  
Vol 19 (10) ◽  
pp. 5
Author(s):  
Heonoh KIM ◽  
Taesoo KIM ◽  
Seok-Beom CHO ◽  
Tae-Gon NOH

2011 ◽  
Vol 22 (6) ◽  
pp. 276-282
Author(s):  
Heon-Oh Kim ◽  
Yong-Soo Kim ◽  
Chun-Ju Youn ◽  
Seok-Beom Cho

2007 ◽  
Vol 9 (8) ◽  
pp. 276-276 ◽  
Author(s):  
J Fulconis ◽  
O Alibart ◽  
W J Wadsworth ◽  
J G Rarity

2003 ◽  
Vol 68 (7) ◽  
Author(s):  
A. T. Tilke ◽  
F. C. Simmel ◽  
H. Lorenz ◽  
R. H. Blick ◽  
J. P. Kotthaus

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 309
Author(s):  
Jie Gu ◽  
Qingzhu Zhang ◽  
Zhenhua Wu ◽  
Jiaxin Yao ◽  
Zhaohao Zhang ◽  
...  

A 16-nm-Lg p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias.


2019 ◽  
Vol 5 (1) ◽  
Author(s):  
Lan-Tian Feng ◽  
Ming Zhang ◽  
Zhi-Yuan Zhou ◽  
Yang Chen ◽  
Ming Li ◽  
...  

Abstract Integrated photonics is becoming an ideal platform for generating two-photon entangled states with high brightness, high stability, and scalability. This high brightness and high quality of photon pair sources encourages researchers further to study and manipulate multiphoton entangled states. Here, we experimentally demonstrate frequency-degenerate four-photon entangled state generation based on a single silicon nanowire 1 cm in length. The polarization encoded entangled states are generated with the help of a Sagnac loop using additional optical elements. The states are analyzed using quantum interference and state tomography techniques. As an example, we show that the generated quantum states can be used to achieve phase super-resolution. Our work provides a method for preparing indistinguishable multi-photon entangled states and realizing quantum algorithms in a compact on-chip setting.


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