Characterization of MOS-structure silicon solar cell fabricated on SOI under photvoltaic biasing

Author(s):  
Weng Su-Han ◽  
Wen-Jeng Ho ◽  
Han-Chung Huang ◽  
Jheng-Jie Liu
2006 ◽  
Vol 45 (5A) ◽  
pp. 3933-3937 ◽  
Author(s):  
Satoshi Omae ◽  
Takashi Minemoto ◽  
Mikio Murozono ◽  
Hideyuki Takakura ◽  
Yoshihiro Hamakawa

2012 ◽  
Vol 195 ◽  
pp. 301-304 ◽  
Author(s):  
Heike Angermann ◽  
U. Stürzebecher ◽  
J. Kegel ◽  
C. Gottschalk ◽  
K. Wolke ◽  
...  

For further enhancement of solar energy conversion efficiency the passivation of silicon (Si) substrate surfaces and interfaces of Si-based solar cell devices is a decisive precondition to reduce recombination losses of photogenerated charge carriers. These losses are mainly controlled by surface charges, the density and the character of rechargeable interface states (Dit) [], which are induced by defects localised in a small interlayer extending over only few Å. Therefore, the application of fast non-destructive methods for characterization of the electronic interface properties directly during the technological process has received an increasing interest in recent years.


Author(s):  
Khorshed Alam ◽  
Tanisha Mehreen ◽  
Mohammad Khairul Basher ◽  
Mohammod Abu Sayid Haque ◽  
Subir C. Ghosh ◽  
...  

Solar Energy ◽  
2016 ◽  
Vol 135 ◽  
pp. 215-221 ◽  
Author(s):  
Md. Momtazur Rahman ◽  
Hasan Mahamudul ◽  
Md. Nazmul Hasan

2013 ◽  
Vol 9 (2) ◽  
pp. 30-39
Author(s):  
Il-Won Seo ◽  
Myung-Soo Yun ◽  
Tae-Hoon Jo ◽  
Chan-Hee Son ◽  
Sung-Ho Cha ◽  
...  

2013 ◽  
Vol 139 (2-3) ◽  
pp. 531-536 ◽  
Author(s):  
Marta Dai Prè ◽  
Isabel Morrow ◽  
Darren J. Martin ◽  
Marco Mos ◽  
Andrea Del Negro ◽  
...  

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