Wet-Chemical Conditioning of H-Terminated Silicon Solar Cell Substrates Investigated by Surface Photovoltage Measurements

2012 ◽  
Vol 195 ◽  
pp. 301-304 ◽  
Author(s):  
Heike Angermann ◽  
U. Stürzebecher ◽  
J. Kegel ◽  
C. Gottschalk ◽  
K. Wolke ◽  
...  
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Energy Conversion Efficiency ◽  
Charge Carriers ◽  
Surface Charges ◽  
Surfaces And Interfaces ◽  
Wet Chemical ◽  
Substrate Surfaces ◽  
Non Destructive

For further enhancement of solar energy conversion efficiency the passivation of silicon (Si) substrate surfaces and interfaces of Si-based solar cell devices is a decisive precondition to reduce recombination losses of photogenerated charge carriers. These losses are mainly controlled by surface charges, the density and the character of rechargeable interface states (Dit) [], which are induced by defects localised in a small interlayer extending over only few Å. Therefore, the application of fast non-destructive methods for characterization of the electronic interface properties directly during the technological process has received an increasing interest in recent years.

Crystal Characterization of Spherical Silicon Solar Cell by X-ray Diffraction

2006 ◽  
Vol 45 (5A) ◽  
pp. 3933-3937 ◽  
Author(s):  
Satoshi Omae ◽  
Takashi Minemoto ◽  
Mikio Murozono ◽  
Hideyuki Takakura ◽  
Yoshihiro Hamakawa
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
X Ray Diffraction ◽  
X Ray ◽  
Crystal Characterization

Wet-chemical treatment and electronic interface properties of silicon solar cell substrates

Open Physics ◽  
2009 ◽  
Vol 7 (2) ◽  
Author(s):  
Heike Angermann ◽  
Jörg Rappich ◽  
Carola Klimm
Keyword(s):  
Solar Cell ◽  
Light Trapping ◽  
High Surface ◽  
Interface State ◽  
Silicon Substrates ◽  
Chemical Treatments ◽  
Interface Recombination ◽  
Wet Chemical ◽  
Substrate Surfaces

AbstractOn textured n-type silicon substrates for solar cell manufacturing, the relation between light trapping behavior, structural imperfections, energetic distribution of interface state densities and interface recombination losses were investigated by applying surface sensitive techniques. The field-modulated surface photovoltage (SPV), in-situ photoluminescence (PL) measurements, total hemispherical UV-NIR-reflectance measurements and electron microscopy (SEM) were employed to yield detailed information on the influence of wet-chemical treatments on preparation induced micro-roughness and electronic properties of polished and textured silicon substrates. It was shown that isotropic as well as anisotropic etching of light trapping structures result in high surface micro-roughness and density of interface states. Removing damaged surface layers in the nm range by wet-chemical treatments, the density of these states and the related interface recombination loss can be reduced. In-situ PL measurements were applied to optimise HF-treatment times aimed at undamaged, oxide-free and hydrogen-terminated substrate surfaces as starting material for subsequent solar cell preparations.

Fabrication And Characterization Of A P-N Junction For Large Area Silicon Solar Cell

2018 ◽  
Author(s):  
Khorshed Alam ◽  
Tanisha Mehreen ◽  
Mohammad Khairul Basher ◽  
Mohammod Abu Sayid Haque ◽  
Subir C. Ghosh ◽  
...  
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Large Area ◽  
Fabrication And Characterization

Current Chemistry: Characterization of Thin-Film Surfaces and Interfaces Using Neutron Reflectometry

2001 ◽  
Vol 54 (8) ◽  
pp. 487 ◽  
Author(s):  
Michael James
Keyword(s):  
Thin Film ◽  
Data Analysis ◽  
Experimental Design ◽  
Extreme Environments ◽  
Neutron Reflectometry ◽  
Buried Interfaces ◽  
Surfaces And Interfaces ◽  
Wide Range ◽  
Non Destructive

Neutron reflectometry has become an increasingly important technique in the characterization of thin-film surfaces and interfaces. Recent advances in instrumentation, experimental design, sample environments and methods of data analysis now make it possible to obtain an angstrom-precision depth profile of the film composition. Neutrons are non-destructive and highly penetrating which makes them ideal probes for the study of buried interfaces as well as surfaces under a wide range of extreme environments. Isotopic H/D substitution (particularly in colloidal, polymeric or biological systems) provides a unique tool for selectively labelling different components of complex planar architectures. The fundamental aspects of neutron reflectometry are discussed, and the utility of this technique is illustrated by a review of several recent studies.

RETRACTED: Characterization of recombination properties at diffused surfaces for industrial silicon solar cell concepts

Solar Energy ◽  
2016 ◽  
Vol 135 ◽  
pp. 215-221 ◽  
Author(s):  
Md. Momtazur Rahman ◽  
Hasan Mahamudul ◽  
Md. Nazmul Hasan
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell

Wet-Chemical Preparation of Textured Silicon Solar Cell Substrates: Surface Conditioning and Electronic Interface Properties

2012 ◽  
Vol 187 ◽  
pp. 349-352 ◽  
Author(s):  
Heike Angermann ◽  
Abdelazize Laades ◽  
U. Stürzebecher ◽  
E. Conrad ◽  
C. Klimm ◽  
...  
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
High Efficiency ◽  
Crystalline Silicon ◽  
Textured Surfaces ◽  
Microelectronic Device ◽  
Chemical Preparation ◽  
The Past ◽  
Wet Chemical ◽  
Microelectronics Technology

The dominance of crystalline silicon (Si) in photovoltaics can be ascribed partly to the extensive knowledge about this material, which has been accumulated in microelectronics technology. Methods to passivate Si interfaces, which were developed for microelectronic device technologies, have been extended to solar cell manufacturing in the past. These methods, however, have been optimised for polished substrates, and do not work so effective with textured surfaces, which commonly used in the fabrication of high efficiency Si solar cells to enhance anti-reflection properties.

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