Integration of a Resonant Tunnelling Diode and a Quantum Well Laser: Model and Experiment

2006 ◽  
Author(s):  
Thomas J Slight ◽  
Charles N Ironside
Keyword(s):  
Quantum Well ◽  
Resonant Tunnelling ◽  
Quantum Well Laser ◽  
Laser Model ◽  
Resonant Tunnelling Diode

Resonant-tunnelling diode oscillator using a slot-coupled quasioptical open resonator

1991 ◽  
Vol 27 (8) ◽  
pp. 647 ◽  
Author(s):  
K.D. Stephan ◽  
E.R. Brown ◽  
C.D. Parker ◽  
W.D. Goodhue ◽  
C.L. Chen ◽  
...  
Keyword(s):  
Open Resonator ◽  
Resonant Tunnelling ◽  
Diode Oscillator ◽  
Resonant Tunnelling Diode

(InAs)1/(GaAs)2short period superlattice strained single quantum well laser on GaAs substrate

1993 ◽  
Vol 29 (1) ◽  
pp. 98-99 ◽  
Author(s):  
H. Kurakake ◽  
T. Uchida ◽  
H. Soda ◽  
S. Yamazaki
Keyword(s):  
Quantum Well ◽  
Gaas Substrate ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Laser

Band Structure and Optical Gain of 1.3 um GaAsSbN/GaAs Compressively Strained Quantum Well Laser

2007 ◽  
Vol 31 ◽  
pp. 95-97
Author(s):  
B. Dong ◽  
W.J. Fan ◽  
Y.X. Dang
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Optical Gain ◽  
Band Structures ◽  
Quantum Well Laser ◽  
Suitable Combination ◽  
Gain Spectra ◽  
Strained Quantum Well

The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 μm lasing. And, the optical gain spectra with different carrier concentrations will be obtained.

Sign in / Sign up

Export Citation Format

Share Document