Theoretical analysis of peak-to-valley ratio degradation caused by scattering processes in multi-barrier resonant tunneling diodes

2003 ◽  
Author(s):  
H. Mizuta ◽  
T. Tanoue ◽  
S. Takahashi
Keyword(s):  
Theoretical Analysis ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes ◽  
Peak To Valley Ratio

Enhancement of current peak‐to‐valley ratio in In0.52Al0.48As/In0.53Ga0.47As ‐based resonant tunneling diodes

1988 ◽  
Vol 63 (12) ◽  
pp. 5875-5876 ◽  
Author(s):  
Robert C. Potter ◽  
Amir A. Lakhani ◽  
Dana Beyea ◽  
Harry Hier
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes ◽  
Peak To Valley Ratio

Peak‐to‐valley ratio of small resonant‐tunneling diodes with various barrier‐thickness asymmetries

1996 ◽  
Vol 68 (6) ◽  
pp. 838-840 ◽  
Author(s):  
T. Schmidt ◽  
M. Tewordt ◽  
R. J. Haug ◽  
K. v. Klitzing ◽  
B. Schönherr ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Barrier Thickness ◽  
Tunneling Diodes ◽  
Peak To Valley Ratio

Nanofabricated SiO2-Si-SiO2 Resonant Tunneling Diodes

2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Resonance Tunneling ◽  
Tunneling Diodes

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.

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