Design of High Performance Portable Optically Pumped Cesium Beam Standards

AbstractMid-infrared optically pumped semiconductor lasers (OPSLs) are presently being investigated for a variety of commercial and military applications. Active regions in such optically pumped lasers must meet the dual requirements of high gain and low loss at mid-IR wavelengths, combined with sufficient absorption of the optical pump at shorter wavelengths for efficient power conversion. In this paper we report the successful growth, fabrication, and characterization of high-performance OPSLs that employ novel active regions consisting of combinations of GalnAsSb integrated-absorber layers with type-II GaInSb/InAs quantum well regions. With 1.85-µm optical pumping at 85 K, OPSLs with such active regions have exhibited a peak output power of 2.1 W at 3.9 pm, improved beam quality, power conversion efficiency of ∼8%, and characteristic temperatures of ∼47 K.

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A High Performance and Portable Optically Pumped Cesium Beam Frequency Standard

2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) ◽

10.1109/ifcs-isaf41089.2020.9234812 ◽

2020 ◽

Author(s):

Xuan He ◽

Qing Wang ◽

Weibin Xie ◽

Nan Chen ◽

Zezheng Xiong ◽

...

Keyword(s):

High Performance ◽

Frequency Standard ◽

Optically Pumped

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Structural Amelioration of 920 Nm Optically Pumped Semiconductor Vertical External-Cavity Surface Emitting Laser (OPS-VECSEL)

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.614-615.1278 ◽

2012 ◽

Vol 614-615 ◽

pp. 1278-1281

Author(s):

Xue Mei Liang ◽

Li Jun Wang ◽

Yong Qiang Ning ◽

Yun Liu

Keyword(s):

High Performance ◽

External Cavity ◽

Important Application ◽

Cavity Surface ◽

Translation Efficiency ◽

The Finite Element Method ◽

Optically Pumped ◽

Semiconductor Electronic ◽

Self Consistent ◽

Surface Emitting Laser

920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) has an important application in laser display. We constructed and optimized a 920 nm OPS-VECSEL with active region of In0.09Ga0.91As quantum well (QW) system pumped by 808 nm laser diode module. By the finite element method, self-consistent solutions of the semiconductor electronic and optical equations are realized to calculate the characteristics parameters of OPS-VECSEL. The performances of device especially the mode, the threshold and the optical-optical translation efficiency were analyzed by dealing with different number of QWs (1, 2 and 3) in one period, QW depth, barrier width, the component and dimension of the non-absorption layer. We chose an improved structure of them. On this basis, we ameliorated the number of QW periods and the simulation showed that in order to obtain high performance device, the choice of the number of QW periods must be cautious.

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