High-performance, aluminum-free optically-pumped mid-IR semiconductor lasers

Author(s):  
A.K. Goyal ◽  
G.W. Turner ◽  
M.J. Manfra ◽  
P.J. Foti ◽  
P. O'Brien ◽  
...  
1999 ◽  
Vol 607 ◽  
Author(s):  
G.W. Turner ◽  
M.J. Manfra ◽  
H.K. Choi ◽  
A.K. Goyal ◽  
S.C. Buchter ◽  
...  

AbstractMid-infrared optically pumped semiconductor lasers (OPSLs) are presently being investigated for a variety of commercial and military applications. Active regions in such optically pumped lasers must meet the dual requirements of high gain and low loss at mid-IR wavelengths, combined with sufficient absorption of the optical pump at shorter wavelengths for efficient power conversion. In this paper we report the successful growth, fabrication, and characterization of high-performance OPSLs that employ novel active regions consisting of combinations of GalnAsSb integrated-absorber layers with type-II GaInSb/InAs quantum well regions. With 1.85-µm optical pumping at 85 K, OPSLs with such active regions have exhibited a peak output power of 2.1 W at 3.9 pm, improved beam quality, power conversion efficiency of ∼8%, and characteristic temperatures of ∼47 K.


2019 ◽  
Vol 25 (6) ◽  
pp. 1-7 ◽  
Author(s):  
Pi-Hui Tuan ◽  
Yen-Hui Hsieh ◽  
Chin-Wei Tu ◽  
Chi-Chun Lee ◽  
Chia-Han Tsou ◽  
...  

2007 ◽  
Vol 54 (12) ◽  
pp. 1677-1683 ◽  
Author(s):  
J.-M. Hopkins ◽  
R. D. Preston ◽  
A. J. Maclean ◽  
S. Calvez ◽  
H. Sun ◽  
...  

2012 ◽  
Author(s):  
Alexandre Laurain ◽  
Maik Scheller ◽  
Tsuei-Lian Wang ◽  
Jorg Hader ◽  
Jerome V. Moloney ◽  
...  

2019 ◽  
Vol 34 (5) ◽  
pp. 055013 ◽  
Author(s):  
Zhongliang Qiao ◽  
Xiang Li ◽  
Hong Wang ◽  
Te Li ◽  
Xin Gao ◽  
...  

1991 ◽  
Vol 38 (4) ◽  
pp. 350-357 ◽  
Author(s):  
V. Giordano ◽  
A. Hamel ◽  
P. Petit ◽  
G. Theobald ◽  
N. Dimarcq ◽  
...  

Author(s):  
Jerome V. Moloney ◽  
Alexandre Laurain

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