Failure analysis of hot-electron effect on power RF N-LDMOS transistors

Author(s):  
M. A. Belaid ◽  
M. Gares ◽  
K. Daoud ◽  
Ph. Eudeline
2021 ◽  
pp. 2002053
Author(s):  
Yuhui Dong ◽  
Leimeng Xu ◽  
Yongli Zhao ◽  
Shalong Wang ◽  
Jizhong Song ◽  
...  

1962 ◽  
Vol 17 (6) ◽  
pp. 970-974 ◽  
Author(s):  
Hajimu Kawamura ◽  
Masakazu Fukai ◽  
Yoshikazu Hayashi

1989 ◽  
Vol 25 (2) ◽  
pp. 1001-1004 ◽  
Author(s):  
F.C. Wellstood ◽  
C. Urbina ◽  
J. Clarke

Author(s):  
Alexander M. Bechasnov ◽  
Mikhail B. Goikhman ◽  
Ivan S. Golovkin ◽  
Nikolay F. Kovalev ◽  
Nikolay G. Kolganov ◽  
...  

1984 ◽  
Vol 23 (Part 1, No. 2) ◽  
pp. 212-215 ◽  
Author(s):  
Toshihiko Mori ◽  
Chihiro Hamaguchi ◽  
Akihiro Shibatomi ◽  
Osamu Ryuzan

Sign in / Sign up

Export Citation Format

Share Document