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2022 ◽  
Author(s):  
Dharmender Nishad ◽  
Kaushal Nigam ◽  
Satyendra Kumar

Abstract Temperature dependence performance variation is one of the major concerns in predicting the actual electrical characteristics of the device as the bandgap of semiconducting material varies with temperature. Therefore, in this article, for the first time, the impact of temperature variations ranging from 300K to 450K on the DC, analog/ radio frequency, and linearity performance of dual material stack gate oxide-source dielectric pocket-tunnel- field-effect transistor (DMSGO-SDP-TFET) is investigated. In this regard, technology computer-aided design (TCAD) simulator is used to analyze DC, and analog/radio frequency performance parameters such as carrier concentration, energy band variation, band to band tunneling rate, IDS - VGS characteristics, transconductance (gm), cut o frequency (f T ),gain-bandwidth product (GBP), maximum oscillating frequency (fmax), transconductance frequency product (TFP), and transit time considering the impact of temperature variations. Furthermore, linearity parameters such as third-order transconductance (gm3), third-order voltage intercept point (VIP3), third-order input-interception point (IIP3), and intermodulation distortion (IMD3) are also analyzed with temperature variations as these performance parameters are significant for linear and analog/radio frequency applications. Moreover, the performance of the proposed DMSGO- SDP-TFET is compared with the conventional dual-material stack gate oxide-tunnel- field-effect transistor (DMSGO-TFET). From the comparative analysis, in terms of % per kelvin, DMSGO-SDP-TFET demonstrates lesser sensitivity towards temperature variation. Hence, the proposed DMSGO-SDP-TFET can be a suitable candidate for low power switching and analog/radio frequency applications at elevated temperatures as compared to conventional DMSGO-TFET.


Author(s):  
Nayere Taebnia ◽  
Rujing Zhang ◽  
Emil B. Kromann ◽  
Alireza Dolatshahi-Pirouz ◽  
Thomas L. Andresen ◽  
...  
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Author(s):  
Monica Castro-Palacios ◽  
Shamraze Ahmed ◽  
Nuhaize Ahmed ◽  
James W. Murray ◽  
Alistair Speidel ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3166
Author(s):  
Sayed Md Tariful Azam ◽  
Abu Saleh Md Bakibillah ◽  
Md Tanvir Hasan ◽  
Md Abdus Samad Kamal

In this study, we theoretically investigated the effect of step gate work function on the InGaAs p-TFET device, which is formed by dual material gate (DMG). We analyzed the performance parameters of the device for low power digital and analog applications based on the gate work function difference (∆ϕS-D) of the source (ϕS) and drain (ϕD) side gate electrodes. In particular, the work function of the drain (ϕD) side gate electrodes was varied with respect to the high work function of the source side gate electrode (Pt, ϕS = 5.65 eV) to produce the step gate work function. It was found that the device performance varies with the variation of gate work function difference (∆ϕS-D) due to a change in the electric field distribution, which also changes the carrier (hole) distribution of the device. We achieved low subthreshold slope (SS) and off-state current (Ioff) of 30.89 mV/dec and 0.39 pA/µm, respectively, as well as low power dissipation, when the gate work function difference (∆ϕS-D = 1.02 eV) was high. Therefore, the device can be a potential candidate for the future low power digital applications. On the other hand, high transconductance (gm), high cut-off frequency (fT), and low output conductance (gd) of the device at low gate work function difference (∆ϕS-D = 0.61 eV) make it a viable candidate for the future low power analog applications.


2021 ◽  
pp. 2101180
Author(s):  
Christina Schmidleithner ◽  
Rujing Zhang ◽  
Nayere Taebnia ◽  
Esben K. U. Larsen ◽  
Kristoffer Almdal ◽  
...  

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