Double Gate MOSFETs: Assessment with Single Gate MOSFETs with Channel Material Configuration, its Structure Orientation and Future Applications

In last 3 decades or so as we have scale down the MOSFETs with single-gate to nanometer region in order to maintain the performance level high but single gate MOSFETs still continue to suffers from the interface coupling, channel orientation, channel mobility, leakage current, switching delay and latch up. Further, the additional parameters such as short channel effects (DIBL, GIDL), body effect, hot electron effect, punch through effect, surface scattering, impact ionization, subthreshold swing and volume inversion has shown result inform of increase in leakage current, decrease of inversion charge and decrease in the drive current since double-gate MOSFET came into existence, which relies on the exploration of novel higher mobility channel materials which might perform even better than current existing single gate MOSFETs. This paper compares double-gate MOSFET configuration and single-gate MOSFET configuration using different performance parameters and channel material configuration and additionally assessed different channel materials along with its structure orientation and the future applications.

Estimation of the charged defect density from hot-electron transport studies in epitaxial ZnO

High-field electron transport measurements by applying short (few ns) voltage pulses on nominally undoped n-type Zn-polar ZnO epilayers are reported and interpreted in terms of the Boltzmann kinetic equation. The transient measurements do not demonstrate a significant change in the electron density up to 320 kV/cm electric field. This result together with the experimental data on the current allows one to estimate the electron drift velocity from the measured current: the highest value of ~2.9 × 107 cm/s is obtained at the pre-breakdown field of 320 kV/cm for the ZnO layer with the electron density of 1.5 × 1017 cm–3. The densities of double-charged oxygen vacancies (~1.6 × 1017 cm–3) and other charged centres (~1.7 × 1017 cm–3) are assumed for the best fit of the simulated and measured hot-electron effect. A correlation with the epilayer growth conditions is demonstrated: the higher Zn cell temperature favours the formation of a higher density of the oxygen vacancies (1.9 × 1017 cm–3 at 347°C).

Design Architectures of the CMOS Power Amplifier for 2.4 GHz ISM Band Applications: An Overview

Power amplifiers (PAs) are among the most crucial functional blocks in the radio frequency (RF) frontend for reliable wireless communication. PAs amplify and boost the input signal to the required output power. The signal is amplified to make it sufficiently high for the transmitter to propagate the required distance to the receiver. Attempted advancements of PA have focused on attaining high-performance RF signals for transmitters. Such PAs are expected to require low power consumption while producing a relatively high output power with a high efficiency. However, current PA designs in nanometer and micrometer complementary metal–oxide semiconductor (CMOS) technology present inevitable drawbacks, such as oxide breakdown and hot electron effect. A well-defined architecture, including a linear and simple functional block synthesis, is critical in designing CMOS PA for various applications. This article describes the different state-of-the art design architectures of CMOS PA, including their circuit operations, and analyzes the performance of PAs for 2.4 GHz ISM (industrial, scientific, and medical) band applications.