AN electrical equivalent circuit model For RF MEMS disk resonators

Author(s):  
Timo Veijola
Measurement ◽  
2015 ◽  
Vol 73 ◽  
pp. 121-126 ◽  
Author(s):  
Satish ◽  
Babita ◽  
Bharat Khurana ◽  
Sachin Kumar ◽  
A.K. Saxena

Author(s):  
Núria Torres Matabosch ◽  
Fabio Coccetti ◽  
Mehmet Kaynak ◽  
Beatrice Espana ◽  
Bernd Tillack ◽  
...  

An accurate and very large band (30–110 GHZ) lumped element equivalent circuit model of capacitive RF-MEMS components based on a standard 250 nm BiCMOS technology is presented. This model is able to predict the effect of the fabrication process dispersion, synthesize new components and monitor the failure mechanisms. Moreover, a reliability study is performed in order to define a screening criterion (VPOUT > 36 V and |VPIN − VPOUT| ≤ 1) based on which a selection of the devices with optimal performance in terms of RF and lifetime performance can be made. Finally, a very quick effective technique (non-intrusive) is proposed to carry out this operation.


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