Equivalent circuit model of reliable RF-MEMS switches for component synthesis, fabrication process characterization and failure analysis

2013 ◽  
Vol 6 (1) ◽  
pp. 73-81
Author(s):  
Núria Torres Matabosch ◽  
Fabio Coccetti ◽  
Mehmet Kaynak ◽  
Beatrice Espana ◽  
Bernd Tillack ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Rf Mems ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Fabrication Process ◽  
Mems Switches ◽  
Process Characterization ◽  
Rf Mems Switches ◽  
Bicmos Technology ◽  
Process Dispersion

An accurate and very large band (30–110 GHZ) lumped element equivalent circuit model of capacitive RF-MEMS components based on a standard 250 nm BiCMOS technology is presented. This model is able to predict the effect of the fabrication process dispersion, synthesize new components and monitor the failure mechanisms. Moreover, a reliability study is performed in order to define a screening criterion (VPOUT > 36 V and |VPIN − VPOUT| ≤ 1) based on which a selection of the devices with optimal performance in terms of RF and lifetime performance can be made. Finally, a very quick effective technique (non-intrusive) is proposed to carry out this operation.

Effect of wafer-level silicon cap packaging on BiCMOS embedded RF-MEMS switch performance

2017 ◽  
Vol 2017 (NOR) ◽  
pp. 1-4
Author(s):  
Selin Tolunay Wipf ◽  
Alexander Göritz ◽  
Matthias Wietstruck ◽  
Maurizio Cirillo ◽  
Christian Wipf ◽  
...  
Keyword(s):  
Rf Mems ◽  
Wafer Level ◽  
3D Fem ◽  
Rf Mems Switch ◽  
Mems Switches ◽  
Mems Switch ◽  
Rf Mems Switches ◽  
Bicmos Technology ◽  
Switch Performance ◽  
Rf Performance

Abstract In this paper, the effect of silicon (Si) cap packaging on the BiCMOS embedded RF-MEMS switch performance is studied. The RF-MEMS switches are designed and fabricated in a 0.25μm SiGe BiCMOS technology for K-band (18 – 27 GHz) applications. The packaging is done based on a wafer-to-wafer bonding technique and the RF-MEMS switches are electrically characterized before and after the Si cap packaging. The experimental data shows the effect of the wafer-level Si cap package on the C-V and S-parameter measurements. The performed 3D FEM simulations prove that the low resistive Si cap, specifically 1 Ω·cm, results in a significant RF performance degradation of the RF-MEMS switch in terms of insertion loss.

An Equivalent Circuit Model for Vertical Comb Drive MEMS Optical Scanner Controlled by Pulse Width Modulation

2012 ◽  
Vol 132 (1) ◽  
pp. 1-9 ◽  
Author(s):  
Satoshi Maruyama ◽  
Muneki Nakada ◽  
Makoto Mita ◽  
Takuya Takahashi ◽  
Hiroyuki Fujita ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Pulse Width ◽  
Pulse Width Modulation ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Comb Drive ◽  
Optical Scanner

scholarly journals A Novel, Improved Equivalent Circuit Model for Double-Sided Linear Induction Motor

Electronics ◽  
2021 ◽  
Vol 10 (14) ◽  
pp. 1644
Author(s):  
Qian Zhang ◽  
Huijuan Liu ◽  
Tengfei Song ◽  
Zhenyang Zhang
Keyword(s):  
Finite Element ◽  
Finite Element Model ◽  
Equivalent Circuit ◽  
Skin Effect ◽  
Equivalent Circuit Model ◽  
Element Model ◽  
Circuit Model ◽  
End Effects ◽  
3D Finite Element ◽  
Linear Induction

A novel, improved equivalent circuit model of double-sided linear induction motors (DLIMs) is proposed, which takes the skin effect and the nonzero leakage reactance of the secondary, longitudinal, and transverse end effects into consideration. Firstly, the traditional equivalent circuit with longitudinal and transverse end effects are briefly reviewed. Additionally, the correction coefficients for longitudinal and transverse end effects derived by one-dimensional analysis models are given. Secondly, correction factors for skin effect, which reflects the inhomogeneous air gap magnetic field vertically, and the secondary leakage reactance are derived by the quasi-two-dimensional analysis model. Then, the proposed equivalent circuit is presented, and the excitation reactance and secondary resistance are modified by the correction coefficients derived from the three analytical models. Finally, a three-dimensional (3D) finite element model is used to verify the proposed equivalent circuit model under varying air gap width and frequency, and the results are also compared with that of the traditional equivalent circuit models. The calculated thrust characteristics by the proposed equivalent circuit and 3D finite element model are experimentally validated under a constant voltage–frequency drive.

Mesh Dependency on a Partial Element Equivalent Circuit Model for an NI HTS Coil

2021 ◽  
Vol 31 (5) ◽  
pp. 1-5
Author(s):  
Chaemin Im ◽  
Geonyoung Kim ◽  
Jeseok Bang ◽  
Kibum Choi ◽  
Soobin An ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Mesh Dependency ◽  
Partial Element Equivalent Circuit ◽  
Partial Element
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