Wideband impedance characterization and modeling of power electronic capacitors under high bias voltage variation

Author(s):  
Fahim Hami ◽  
Habib Boulzazen ◽  
Fabrice Duval ◽  
Moncef Kadi
Author(s):  
Fumiyoshi Kuwashima ◽  
Takuya Shirao ◽  
Masahiko Tani ◽  
Kazuyoshi Kurihara ◽  
Kohji Yamamoto ◽  
...  

2021 ◽  
Vol 150 ◽  
pp. 107250
Author(s):  
Mark Pallay ◽  
Ronald N. Miles ◽  
Shahrzad Towfighian

2013 ◽  
Vol 1577 ◽  
Author(s):  
Ning Deng ◽  
Hongguang Cheng

ABSTRACTWe studied the transport properties of the Fe/MgO/Fe and Fe/Ag/MgO/Ag/Fe magnetic tunnel junctions (MTJs) with 13-layer MgO barrier under bias voltage based on first-principles calculations. Our results showed that two features determine the TMR value decreases with bias of Fe/MgO/Fe MTJ: (1) interfacial states lying at 1.06 eV in spin down channel (2) the energy level of the spin down Δ1 band of the Fe electrode. Our results showed that an inserted Ag mono-layer at Fe/MgO interface can remarkably improve the TMR effect at a high bias voltage.


2002 ◽  
Vol 378 (1) ◽  
pp. 157-166 ◽  
Author(s):  
Yuhki Sakuratani ◽  
Masato Asai ◽  
Hitoshi Yamamoto ◽  
Masatoshi Tokita ◽  
Toshiyuki Watanabe ◽  
...  

2006 ◽  
Vol 100 (8) ◽  
pp. 084504 ◽  
Author(s):  
H. J. Shin ◽  
H. J. Song ◽  
J. Lee ◽  
H. J. Yoon ◽  
J. Chung ◽  
...  

1968 ◽  
Vol 4 (23) ◽  
pp. 504 ◽  
Author(s):  
S.Y. Narayan ◽  
A.R. Gobat

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