A 40 nm, 454MHz 114 fJ/bit area-efficient SRAM memory with integrated charge pump

Author(s):  
Bram Rooseleer ◽  
Wim Dehaene
2013 ◽  
Vol 78 (2) ◽  
pp. 373-389 ◽  
Author(s):  
Oi-Ying Wong ◽  
Hei Wong ◽  
Wing-Shan Tam ◽  
Chi-Wah Kok
Keyword(s):  

Author(s):  
Go URAKAWA ◽  
Hiroyuki KOBAYASHI ◽  
Jun DEGUCHI ◽  
Ryuichi FUJIMOTO

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