Demonstration and Modelling of Excellent RF Switch Performance of 22nm FD-SOI Technology for Millimeter-Wave Applications

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2019.8901823 ◽

2019 ◽

Author(s):

S. Yadav ◽

W.H. Chow ◽

A. Bellaouar ◽

J.S. Wong ◽

T. Chen ◽

...

Keyword(s):

Millimeter Wave ◽

Rf Switch ◽

Switch Performance ◽

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Evaluation of 300 mm High Resistivity SOI UNIBOND material for RF applications up to millimeter wave using 65 nm CMOS SOI technology

2007 IEEE International Conference on Microelectronic Test Structures ◽

10.1109/icmts.2007.374485 ◽

2007 ◽

Author(s):

F. Gianesello ◽

C. Raynaud ◽

D. Gloria ◽

S. Boret ◽

B. Ghyselen ◽

...

Keyword(s):

Millimeter Wave ◽

High Resistivity ◽

Rf Applications ◽

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An ultra low power consumption millimeter-wave voltage controlled oscillator in a 65 nm CMOS-SOI technology

Analog Integrated Circuits and Signal Processing ◽

10.1007/s10470-013-0040-z ◽

2013 ◽

Vol 76 (3) ◽

pp. 277-286 ◽

Author(s):

A. Mariano ◽

O. Mazouffre ◽

B. Leite ◽

Y. Deval ◽

J. B. Begueret ◽

...

Keyword(s):

Power Consumption ◽

Low Power ◽

Millimeter Wave ◽

Low Power Consumption ◽

Voltage Controlled Oscillator ◽

Ultra Low Power ◽

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22nm FD-SOI Technology with Back-biasing Capability Offers Excellent Performance for Enabling Efficient, Ultra-low Power Analog and RF/Millimeter-Wave Designs

2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) ◽

10.1109/rfic.2019.8701768 ◽

2019 ◽

Author(s):

S.N. Ong ◽

L.H.K. Chan ◽

K.W.J. Chew ◽

C.K. Lim ◽

W. L. Oo ◽

...

Keyword(s):

Low Power ◽

Millimeter Wave ◽

Excellent Performance ◽

Ultra Low Power ◽

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Analyses of Cascaded Switchable SIW Resonators and Its Application in RF Switch for Millimeter Wave Communication Systems

10.1109/iswta52208.2021.9587382 ◽

2021 ◽

Author(s):

N. A. Shairi ◽

A. A. Zolkefli ◽

B. H. Ahmad ◽

Z. Zakaria ◽

I. M. Ibrahim ◽

...

Keyword(s):

Millimeter Wave ◽

Communication Systems ◽

Rf Switch ◽

Millimeter Wave Communication

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Evaluating substrate's effect on RF switch performance via Verilog-A GaN HEMT model

Microelectronics Journal ◽

10.1016/j.mejo.2017.02.007 ◽

2017 ◽

Vol 62 ◽

pp. 43-48 ◽

Author(s):

Shubhankar Majumdar ◽

Dhrubes Biswas

Keyword(s):

Rf Switch ◽

Gan Hemt ◽

Switch Performance

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Monolithic PCM Based Miniaturized T-type RF Switch for Millimeter Wave Redundancy Switch Matrix Applications

2019 IEEE MTT-S International Microwave Symposium (IMS) ◽

10.1109/mwsym.2019.8700946 ◽

2019 ◽

Author(s):

Tejinder Singh ◽

Raafat R. Mansour

Keyword(s):

Millimeter Wave ◽

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Millimeter-Wave Power Amplifiers for 5G Applications in 28 nm FD-SOI Technology

Integrated Circuits and Systems - The Fourth Terminal ◽

10.1007/978-3-030-39496-7_8 ◽

2020 ◽

pp. 169-222

Author(s):

Florent Torres ◽

Andreia Cathelin ◽

Eric Kerhervé

Keyword(s):

Millimeter Wave ◽

Power Amplifiers ◽

Soi Technology ◽

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Millimeter-Wave Distributed Oscillators in 28 nm FD-SOI Technology

Integrated Circuits and Systems - The Fourth Terminal ◽

10.1007/978-3-030-39496-7_7 ◽

2020 ◽

pp. 135-168

Author(s):

Raphaël Guillaume ◽

Andreia Cathelin ◽

Yann Deval

Keyword(s):

Millimeter Wave ◽

Soi Technology ◽

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Millimeter-wave power amplifiers in 45nm CMOS SOI technology

IEEE 2011 International SOI Conference ◽

10.1109/soi.2011.6081689 ◽

2011 ◽

Author(s):

Jing-Hwa Chen ◽

Sultan R. Helmi ◽

Saeed Mohammadi

Keyword(s):

Millimeter Wave ◽

Power Amplifiers ◽

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45-nm CMOS SOI Technology Characterization for Millimeter-Wave Applications

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.2014.2317551 ◽

2014 ◽

Vol 62 (6) ◽

pp. 1301-1311 ◽

Author(s):

Ozgur Inac ◽

Mehmet Uzunkol ◽

Gabriel M. Rebeiz

Keyword(s):

Millimeter Wave ◽

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