Modeling of submicron triple material GaAs MESFET including the effect of third region length for microwave frequency applications

Author(s):  
Nacereddine Lakhdar ◽  
Brahim Lakehal
2012 ◽  
Vol 2 (2) ◽  
pp. 374-375
Author(s):  
Asha Buliya ◽  
◽  
K. C. Pancholi K. C. Pancholi ◽  
R. K. Paliwal R. K. Paliwal

2018 ◽  
Vol 12 (1) ◽  
pp. 34-40
Author(s):  
Said Elkhaldi ◽  
Naima Amar Touhami ◽  
Mohamed Aghoutane ◽  
Taj-eddin Elhamadi

Introduction:This paper focuses on improving the power amplifier linearity for wireless communications. The use of a single branch of a power amplifier can produce high distortion with low efficiency.Method:In this paper, the Linear Amplification with Nonlinear Components (LINC) technique is used to improve the linearity and efficiency of the power amplifier. The LINC technique is based on converting the envelope modulation signal into two constant envelope phase-modulated baseband signals. After amplification and combining the resulting signals, the required linear output signal is obtained. To validate the proposed approach, LINC technique is used for linearizing an amplifier based on a GaAs MESFET (described by an artificial neural network Model).Conclusion:Good results have been achieved, and an improvement of about 40.80 dBc and 47.50 dBc respectively is obtained for the Δlower C/I and Δupper C/I at 5.25 GHz.


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