1.5 W 11–17 GHz GaAs MESFET power amplifier utilising lumped-element matching techniques

1984 ◽  
Vol 20 (13) ◽  
pp. 564
Author(s):  
J.B. Klatskin
Keyword(s):  
Power Amplifier ◽  
Lumped Element ◽  
Gaas Mesfet ◽  
Matching Techniques

Improvement of Carrier Power to Third-Order Intermodulation Distortion Power Ratio for a Power Amplifier at 5.25 GHz using LINC Method

2018 ◽  
Vol 12 (1) ◽  
pp. 34-40
Author(s):  
Said Elkhaldi ◽  
Naima Amar Touhami ◽  
Mohamed Aghoutane ◽  
Taj-eddin Elhamadi
Keyword(s):  
Power Amplifier ◽  
Artificial Neural Network Model ◽  
Power Ratio ◽  
Linear Amplification ◽  
Third Order ◽  
Gaas Mesfet ◽  
Constant Envelope ◽  
Modulation Signal ◽  
Low Efficiency ◽  
Nonlinear Components

Introduction:This paper focuses on improving the power amplifier linearity for wireless communications. The use of a single branch of a power amplifier can produce high distortion with low efficiency.Method:In this paper, the Linear Amplification with Nonlinear Components (LINC) technique is used to improve the linearity and efficiency of the power amplifier. The LINC technique is based on converting the envelope modulation signal into two constant envelope phase-modulated baseband signals. After amplification and combining the resulting signals, the required linear output signal is obtained. To validate the proposed approach, LINC technique is used for linearizing an amplifier based on a GaAs MESFET (described by an artificial neural network Model).Conclusion:Good results have been achieved, and an improvement of about 40.80 dBc and 47.50 dBc respectively is obtained for the Δlower C/I and Δupper C/I at 5.25 GHz.

A broadband 23.1 ∼ 27.2 GHz doherty power amplifier with peak output power of 24.3 dBm

Circuit World ◽  
2019 ◽  
Vol 46 (1) ◽  
pp. 1-5
Author(s):  
Yanfeng Fang ◽  
Yijiang Zhang
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Input Power ◽  
Content Type ◽  
Fully Integrated ◽  
Power Added Efficiency ◽  
Peak Output Power ◽  
Saturated Output Power ◽  
Direct Input ◽  
Matching Techniques

Purpose This paper aims to implement a new high output power fully integrated 23.1 to 27.2 GHz gallium arsenide heterojunction bipolar transistor power amplifier (PA) to meet the stringent linearity requirements of LTE systems. Design/methodology/approach The direct input power dividing technique is used on the chip. Broadband input and output matching techniques are used for broadband Doherty operation. Findings The PA achieves a small-signal gain of 22.8 dB at 25.1 GHz and a saturated output power of 24.3 dBm at 25.1 GHz with a maximum power added efficiency of 31.7%. The PA occupies 1.56 mm2 (including pads) and consumes a maximum current of 79.91 mA from a 9 V supply. Originality/value In this paper, the author proposed a novel direct input dividing technique with broadband matching circuits using a low Q output matching technique, and demonstrated a fully-integrated Doherty PA across frequencies of 23.1∼27.2 GHz for long term evolution-license auxiliary access (LTE-LAA) handset applications.

scholarly journals A trade-off design of microstrip broadband power amplifier for UHF applications

2020 ◽  
Vol 10 (1) ◽  
pp. 919
Author(s):  
Mohamed Ribate ◽  
Rachid Mandry ◽  
Jamal Zbitou ◽  
Larbi El Abdellaoui ◽  
Ahmed Errkik ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Transmission Lines ◽  
Impedance Matching ◽  
Wave Impedance ◽  
Large Signal ◽  
Active Device ◽  
Quarter Wave ◽  
Lumped Elements ◽  
Signal Simulation ◽  
Matching Techniques

In this paper, the design of a Broadband Power Amplifier for UHF applications is presented. The proposed BPA is based on ATF13876 Agilent active device. The biasing and matching networks both are implemented by using microstrip transmission lines. The input and output matching circuits are designed by combining two broadband matching techniques: a binomial multi-section quarter wave impedance transformer and an approximate transformation of previously designed lumped elements. The proposed BPA shows excellent performances in terms of impedance matching, power gain and unconditionally stability over the operating bandwidth ranging from 1.2 GHz to 3.3 GHz. At 2.2 GHz, the large signal simulation shows a saturated output power of 18.875 dBm with an output 1-dB compression point of 6.5 dBm of input level and a maximum PAE of 36.26%.

A 6-GHz Four-Stage GaAs MESFET Power Amplifier (Short Papers)

1976 ◽  
Vol 24 (6) ◽  
pp. 381-383 ◽  
Author(s):  
Y. Arai ◽  
T. Kouno ◽  
T. Horimatsu ◽  
i. Komizo
Keyword(s):  
Power Amplifier ◽  
Gaas Mesfet
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