A brand new robust oriented near-threshold 8T SRAM design methodology

2016 6th International Conference on Electronics Information and Emergency Communication (ICEIEC) ◽

10.1109/iceiec.2016.7589746 ◽

2016 ◽

Author(s):

Song Zhang ◽

Chengzhi Jiang ◽

Dayu Zhang ◽

He Wang

Keyword(s):

Design Methodology ◽

Sram Design ◽

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A systematic design methodology for yield-driven near-threshold SRAM design

2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) ◽

10.1109/icsict.2014.7021354 ◽

2014 ◽

Author(s):

Chengzhi Jiang ◽

Zuochang Ye ◽

Yan Wang

Keyword(s):

Design Methodology ◽

Systematic Design ◽

Sram Design ◽

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Near-threshold SRAM design with dynamic write-assist circuitry

2016 International Conference on Computer, Information and Telecommunication Systems (CITS) ◽

10.1109/cits.2016.7546413 ◽

2016 ◽

Author(s):

Chengzhi Jiang ◽

Dayu Zhang ◽

Song Zhang ◽

He Wang

Keyword(s):

Sram Design ◽

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Ultralow power SRAM design in near threshold region using 45nm CMOS technology

2011 IEEE INTERNATIONAL CONFERENCE ON ELECTRO/INFORMATION TECHNOLOGY ◽

10.1109/eit.2011.5978606 ◽

2011 ◽

Author(s):

Yinhui Chen ◽

Zhiyuan Yu ◽

Haiqing Nan ◽

Ken Choi

Keyword(s):

Cmos Technology ◽

Threshold Region ◽

Sram Design ◽

Ultralow Power ◽

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A yield-driven near-threshold 8-T SRAM design with transient negative bit-line scheme

2017 7th IEEE International Conference on Electronics Information and Emergency Communication (ICEIEC) ◽

10.1109/iceiec.2017.8076571 ◽

2017 ◽

Author(s):

Chengzhi Jiang ◽

Dayu Zhang ◽

Song Zhang ◽

He Wang ◽

Zhong Zhuang ◽

...

Keyword(s):

Sram Design ◽

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Yield-driven near-threshold SRAM design

2007 IEEE/ACM International Conference on Computer-Aided Design ◽

10.1109/iccad.2007.4397341 ◽

2007 ◽

Author(s):

Gregory K. Chen ◽

David Blaauw ◽

Trevor Mudge ◽

Dennis Sylvester ◽

Nam Sung Kim

Keyword(s):

Sram Design ◽

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Sub-threshold and near-threshold SRAM design

2010 IEEE 26-th Convention of Electrical and Electronics Engineers in Israel ◽

10.1109/eeei.2010.5662147 ◽

2010 ◽

Author(s):

Adam Teman ◽

Alexander Fish

Keyword(s):

Sram Design ◽

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A near-threshold SRAM design with transient negative bit-line voltage scheme

2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) ◽

10.1109/edssc.2015.7285052 ◽

2015 ◽

Author(s):

Chengzhi Jiang ◽

Zuochang Ye ◽

Yan Wang

Keyword(s):

Line Voltage ◽

Sram Design ◽

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An Efficient and Accurate Variation-Aware Design Methodology for Near-threshold MOS-Varactor based VCO Architectures

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems ◽

10.1109/tcad.2020.3037881 ◽

2020 ◽

pp. 1-1

Author(s):

Lalit Mohan Dani ◽

Neeraj Mishra ◽

Bulusu Anand

Keyword(s):

Design Methodology ◽

Variation Aware Design ◽

Mos Varactor ◽

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A novel design methodology for error-resilient circuits in near-threshold computing

2016 IEEE International Conference on Consumer Electronics-Asia (ICCE-Asia) ◽

10.1109/icce-asia.2016.7804807 ◽

2016 ◽

Author(s):

Jaemin Lee ◽

Sunmean Kim ◽

Youngmin Kim ◽

Seokhyeong Kang

Keyword(s):

Design Methodology ◽

Error Resilient ◽

Novel Design ◽

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Stability analysis and design methodology of near-threshold 6T SRAM cells

2016 28th International Conference on Microelectronics (ICM) ◽

10.1109/icm.2016.7847856 ◽

2016 ◽

Author(s):

Reem El Senousy ◽

Sameh Ibrahim ◽

Wagdy Anis

Keyword(s):

Stability Analysis ◽

Design Methodology ◽

Analysis And Design ◽

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