Ultralow power SRAM design in near threshold region using 45nm CMOS technology

2011 ◽  
Author(s):  
Yinhui Chen ◽  
Zhiyuan Yu ◽  
Haiqing Nan ◽  
Ken Choi
Keyword(s):  
Cmos Technology ◽  
Threshold Region ◽  
Sram Design ◽  
Ultralow Power ◽  
Near Threshold

scholarly journals Ultralow-Power Design in Near-Threshold Region

2010 ◽  
Vol 98 (2) ◽  
pp. 237-252 ◽  
Author(s):  
D. Markovic ◽  
C.C. Wang ◽  
L.P. Alarcon ◽  
Tsung-Te Liu ◽  
J.M. Rabaey
Keyword(s):  
Threshold Region ◽  
Ultralow Power ◽  
Near Threshold

scholarly journals Design of an Ultra-Low Voltage Bias Current Generator Highly Immune to Electromagnetic Interference

2021 ◽  
Vol 11 (1) ◽  
pp. 6
Author(s):  
Orazio Aiello
Keyword(s):  
Integrated Circuits ◽  
Electromagnetic Interference ◽  
Low Voltage ◽  
Current Source ◽  
Building Blocks ◽  
Cmos Technology ◽  
Threshold Region ◽  
Output Current ◽  
Current Generator ◽  
Technology Process

The paper deals with the immunity to Electromagnetic Interference (EMI) of the current source for Ultra-Low-Voltage Integrated Circuits (ICs). Based on the properties of IC building blocks, such as the current-splitter and current correlator, a novel current generator is conceived. The proposed solution is suitable to provide currents to ICs operating in the sub-threshold region even in the presence of an electromagnetic polluted environment. The immunity to EMI of the proposed solution is compared with that of a conventional current mirror and evaluated by analytic means and with reference to the 180 nm CMOS technology process. The analysis highlights how the proposed solution generates currents down to nano-ampere intrinsically robust to the Radio Frequency (RF) interference affecting the input of the current generator, differently to what happens to the output current of a conventional mirror under the same conditions.

scholarly journals Ultralow power voltage reference circuit for implantable devices in standard CMOS technology

2019 ◽  
Vol 47 (7) ◽  
pp. 991-1005
Author(s):  
Óscar Pereira‐Rial ◽  
Paula López ◽  
Juan M. Carrillo ◽  
Víctor M. Brea ◽  
Diego Cabello
Keyword(s):  
Cmos Technology ◽  
Implantable Devices ◽  
Voltage Reference ◽  
Reference Circuit ◽  
Ultralow Power

A 4.0 GHz 291 Mb Voltage-Scalable SRAM Design in a 32 nm High-k + Metal-Gate CMOS Technology With Integrated Power Management

2010 ◽  
Vol 45 (1) ◽  
pp. 103-110 ◽  
Author(s):  
Yih Wang ◽  
Uddalak Bhattacharya ◽  
Fatih Hamzaoglu ◽  
Pramod Kolar ◽  
Yong-Gee Ng ◽  
...  
Keyword(s):  
Power Management ◽  
Cmos Technology ◽  
Metal Gate ◽  
High K ◽  
Sram Design
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