Photoluminescence measurements of InP-based double-heterostructure crystals with high-power 980-nm laser excitation and a thin Si-plate filter

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) ◽

10.1109/iciprm.2002.1014485 ◽

2003 ◽

Author(s):

M. Nakao

Keyword(s):

Laser Excitation ◽

Double Heterostructure ◽

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Characterization of InGaAsP/InP double‐heterostructure wafers grown by metalorganic vapor phase epitaxy for semiconductor lasers by photoluminescence investigation with high‐power YAG‐laser excitation

Journal of Applied Physics ◽

10.1063/1.339908 ◽

1988 ◽

Vol 63 (5) ◽

pp. 1722-1728 ◽

Author(s):

Masashi Nakao ◽

Kenji Sato ◽

Mamoru Oishi ◽

Yoshio Itaya ◽

Yoshihiro Imamura

Keyword(s):

Semiconductor Lasers ◽

Vapor Phase ◽

Laser Excitation ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Yag Laser ◽

Double Heterostructure

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High-power InGaN/AlGaN double-heterostructure blue-light-emitting diodes

Proceedings of 1994 IEEE International Electron Devices Meeting ◽

10.1109/iedm.1994.383328 ◽

2002 ◽

Author(s):

S. Nakamura

Keyword(s):

Light Emitting Diodes ◽

Light Emitting ◽

Double Heterostructure

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Thyratrons versus thyristors for high power pulse laser excitation

10.1109/modsym.1990.200999 ◽

2002 ◽

Author(s):

P.H. Swart ◽

H.M. von Begmann

Keyword(s):

Pulse Laser ◽

Laser Excitation ◽

Power Pulse ◽

Pulse Laser Excitation ◽

High Power Pulse

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Output Charaeteristics Of High Power GaAs/GaAlAs Double Heterostructure Rib-Waveguide Bow-tie Lasers

Integrated Photonics Research ◽

10.1364/ipr.1996.iwf3 ◽

1996 ◽

Author(s):

I. Middlemast ◽

J. Sarma ◽

P.S. Spencer

Keyword(s):

Rib Waveguide ◽

Double Heterostructure ◽

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XeCl laser excitation by high power microwave pulses

Applied Physics B Photophysics and Laser Chemistry ◽

10.1007/bf00325503 ◽

1992 ◽

Vol 54 (3) ◽

pp. 205-207 ◽

Author(s):

H. H. Klingenberg ◽

F. Gekat

Keyword(s):

Laser Excitation ◽

High Power Microwave ◽

Microwave Pulses ◽

Power Microwave

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High-power UV InGaN/AlGaN double-heterostructure LEDs

Journal of Crystal Growth ◽

10.1016/s0022-0248(98)00292-9 ◽

1998 ◽

Vol 189-190 ◽

pp. 778-781 ◽

Author(s):

Takashi Mukai ◽

Daisuke Morita ◽

Shuji Nakamura

Keyword(s):

Double Heterostructure

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Growth of compound semiconductors and high-power InGaN/AlGaN double heterostructure violet-light-emitting diodes

Microelectronics Journal ◽

10.1016/0026-2692(94)90131-7 ◽

1994 ◽

Vol 25 (8) ◽

pp. 651-659 ◽

Author(s):

Shuji Nakamura

Keyword(s):

Light Emitting Diodes ◽

Compound Semiconductors ◽

Light Emitting ◽

Double Heterostructure ◽

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Changes in the photoluminescence spectra of the magnetic semiconductor CdCr2Se4under high-power picosecond-laser excitation which determine that the fundamental gap is direct

Physical Review B ◽

10.1103/physrevb.27.1180 ◽

1983 ◽

Vol 27 (2) ◽

pp. 1180-1183 ◽

Author(s):

S. S. Yao ◽

R. R. Alfano

Keyword(s):

Laser Excitation ◽

Magnetic Semiconductor ◽

Picosecond Laser ◽

Photoluminescence Spectra

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Glow Discharge for High Power cw CO2 Laser Excitation

The Review of Laser Engineering ◽

10.2184/lsj.13.570 ◽

1985 ◽

Vol 13 (7) ◽

pp. 570-577 ◽

Author(s):

Masaaki TANAKA ◽

Yukio SATO ◽

Masao HISHII ◽

Haruhiko NAGAI ◽

Norikazu TABATA

Keyword(s):

Glow Discharge ◽

Co2 Laser ◽

Laser Excitation ◽

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The role of partial saturation of the λ3 ladder in SF6 absorption under high power infrared laser excitation

Optics Communications ◽

10.1016/0030-4018(80)90272-2 ◽

1980 ◽

Vol 32 (3) ◽

pp. 411-415 ◽

Author(s):

P.G. Harper ◽

I. Mackie ◽

S.D. Smith

Keyword(s):

Laser Excitation ◽

Infrared Laser ◽

Partial Saturation

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